I-Silicon Carbide Coated Graphite Susceptor ye-LED Etching

ISilicon Carbide Coated Graphite Susceptor for LED Etching Featured Image

Inkcazelo emfutshane:

I-Silicon carbide susceptor ye-LED etching (i-tray ye-SiC) yinto ekhethekileyo yokudibanisa i-silicon etching (umshini we-ICP etching). I-wafer carrier, eyaziwa ngokuba yi-wafer carrier, i-silicon wafer carrier, eyaziwa ngokuba yi-pocket wafer. Isetyenziswe ngokubanzi kwi-CVD ye-semiconductor kunye ne-vacuum sputtering.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Silicon carbide coated susceptor yia isitshixoicandelo elisetyenziswa kwiinkqubo ezahlukeneyo zokwenziwa kwe-semiconductor.Sisebenzisa itekhnoloji yethu enelungelo elilodwa lomenzi wechiza ukwenza i-silicon carbide coated susceptor ngayoubunyulu obuphezulu kakhulu,kulungileukutyabekaukufanakunye nobomi benkonzo obugqwesileyo, njengoukumelana neekhemikhali eziphezulu kunye neempawu zokuzinza kwe-thermal.

Amandla eVET yi iumenzi wokwenyani weemveliso ezenziwe ngokwezifiso zegraphite kunye nesilicon carbide ene-CVD coating,inokubonelelaezahlukeneyoiindawo ezilungiselelwe i-semiconductor kunye ne-photovoltaic industry. OIqela le-ur lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwepheshayeyakho.

Siqhubeka siphuhlisa iinkqubo eziphambili ukubonelela ngemathiriyeli ephezulu kakhulu,kwayebaye benza iteknoloji ekhethekileyo yelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula kwi-detachment.

Fukutya kweemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700℃.
2. Ukucoceka okuphezulu kunyeukufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	iFCC β isigaba多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Iinkozo uSiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-point
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1