IUcoceko oluPhezulu oluQinisekileyo lwe-CVD SiC Ubuninzi kunye neSiseko seGraphiteukusuka kwi-vet-china yimathiriyeli ephezulu eyenzelwe ukuhlangabezana neemfuno zamashishini asebenza kakhulu. Le mveliso idibanisa ukucoceka okuphezulu kunye nokuzinza okukhethekileyo kwe-thermalI-CVD SiC (i-Chemical Vapor Deposition Silicon Carbide)nge robustisiseko segraphite, ukubonelela ngecandelo elihlala ixesha elide, elinamandla aphezulu kwizicelo ezahlukeneyo. IiSiC eqinileyoisakhiwo siqinisekisa iimpawu eziphezulu zemishini, ngelixa isiseko segraphite sinikezela nge-conductivity egqwesileyo ye-thermal, okwenza le nto ifaneleke kwiindawo eziphezulu zokushisa.
Ucoceko oluphezulu lwe-SiC yokwambathisa kwisixa esiqinileyo siphucula ukuxhathisa ukunxiba, i-oxidation, kunye nokubola kweekhemikhali, okuyimfuneko ekusetyenzisweni kwi-semiconductor processing, i-aerospace, kunye namanye amacandelo anzima amashishini. i-vet-china iqinisekisa ukubaCVD SiC ukutyabekaInkqubo iphumela kumaleko afanayo kunye ashinyeneyo wesilicon carbide, ephucula amandla kunye nobomi obude bemveliso.
Esi siqilima seSiC sezinto ezininzi esinesiseko segraphite sinikezela ngokuxhathisa ukothuka kwe-thermal, okusivumela ukuba sigcine uzinzo phantsi kotshintsho olukhawulezayo lobushushu. Indibaniselwano ye-CVD SiC kunye ne-graphite core iyenza ifaneleke ukusetyenziswa kwiimeko ezigqithisileyo, ezifana ne-chemical reactors, i-semiconductor furnaces, kunye nezixhobo zokushisa okuphezulu.
Ukongeza, iCVD SiC ukutyabekainikeza ubunzima obuphezulu bomphezulu, okwenza ukuba izinto eziphathekayo zixhathise ukunxiba kunye nokuthotywa kweendawo ezinobunzima obuphezulu. Ucoceko oluphezulu lwe-CVD SiC luqinisekisa ukungcoliseka okuncinci, okubaluleke ngakumbi kwiinkqubo ze-semiconductor kunye nezichanekileyo.
I-vet-china inikezela nge-High Purity Solid CVD SiC Bulk NgeSiseko se-Graphite njengesisombululo esiguquguqukayo, esisebenza kakhulu kumashishini afuna izinto ezikwazi ukunyamezela iimeko ezinzima ngelixa zigcina ingqibelelo yesakhiwo kunye nokucoceka.
