I-8 Intshi ye-P Uhlobo lwe-Silicon Wafer oluvela kwi-VET Energy yi-wafer ye-silicon ephezulu yokusebenza eyenzelwe uluhlu olubanzi lwezicelo ze-semiconductor, kubandakanywa iiseli zelanga, izixhobo ze-MEMS, kunye neesekethe ezidibeneyo. Iyaziwa ngokusebenza kwayo kombane okugqwesileyo kunye nokusebenza okungaguqukiyo, esi siqwengana silukhetho olukhethwa ngabavelisi abafuna ukuvelisa izinto ezithembekileyo nezisebenzayo zombane. Amandla e-VET aqinisekisa amanqanaba achanekileyo e-doping kunye nomgangatho ophezulu wokugqiba umphezulu wokwenziwa kwesixhobo.
Ezi 8 Intshi P zohlobo lweSilicon Wafers zihambelana ngokupheleleyo nezinto ezahlukeneyo ezifana ne-SiC Substrate, i-SOI Wafer, iSiN Substrate, kwaye ifanelekile ukukhula kwe-Epi Wafer, iqinisekisa ukuguquguquka kweenkqubo zokwenziwa kwe-semiconductor eziphambili. Ii-wafers zinokusetyenziswa ngokudibeneyo kunye nezinye izinto ezikumgangatho ophezulu ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, ezenza zilungele usetyenziso lwe-elektroniki lwesizukulwana esilandelayo. Uyilo lwabo olomeleleyo lukwangena ngokungenamthungo kwiinkqubo ezisekelwe kwiCassette, ziqinisekisa ukuphathwa ngokufanelekileyo kunye nomthamo ophezulu wemveliso.
I-VET Energy ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo. Siyakwazi ukwenza ngokwezifiso ii-wafers kunye ne-resistivity eyahlukeneyo, umxholo we-oxygen, ubukhulu, njl. ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo ngexesha lenkqubo yemveliso.
IINGCACISO ZOKUXHAPHAZA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |