8 Intshi P Uhlobo lweSilicon Wafer

Inkcazelo emfutshane:

Ukwazisa i-premium-grade 8 Inch P Uhlobo lweSilicon Wafer, uphawu lokugqwesa oluvela kwiVET Energy. Esi sisonka sikhethekileyo, sineprofayile ye-doping yohlobo lwe-P, yenziwe ngobuchule ukuze ihlangabezane neyona migangatho iphezulu yomgangatho kunye nokusebenza.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-8 Intshi ye-P Uhlobo lwe-Silicon Wafer oluvela kwi-VET Energy yi-wafer ye-silicon ephezulu yokusebenza eyenzelwe uluhlu olubanzi lwezicelo ze-semiconductor, kubandakanywa iiseli zelanga, izixhobo ze-MEMS, kunye neesekethe ezidibeneyo. Iyaziwa ngokusebenza kwayo kombane okugqwesileyo kunye nokusebenza okungaguqukiyo, esi siqwengana silukhetho olukhethwa ngabavelisi abafuna ukuvelisa izinto ezithembekileyo nezisebenzayo zombane. Amandla e-VET aqinisekisa amanqanaba achanekileyo e-doping kunye nomgangatho ophezulu wokugqiba umphezulu wokwenziwa kwesixhobo.

Ezi 8 Intshi P zohlobo lweSilicon Wafers zihambelana ngokupheleleyo nezinto ezahlukeneyo ezifana ne-SiC Substrate, i-SOI Wafer, iSiN Substrate, kwaye ifanelekile ukukhula kwe-Epi Wafer, iqinisekisa ukuguquguquka kweenkqubo zokwenziwa kwe-semiconductor eziphambili. Ii-wafers zinokusetyenziswa ngokudibeneyo kunye nezinye izinto ezikumgangatho ophezulu ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, ezenza zilungele usetyenziso lwe-elektroniki lwesizukulwana esilandelayo. Uyilo lwabo olomeleleyo lukwangena ngokungenamthungo kwiinkqubo ezisekelwe kwiCassette, ziqinisekisa ukuphathwa ngokufanelekileyo kunye nomthamo ophezulu wemveliso.

I-VET Energy ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo. Siyakwazi ukwenza ngokwezifiso ii-wafers kunye ne-resistivity eyahlukeneyo, umxholo we-oxygen, ubukhulu, njl. ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo ngexesha lenkqubo yemveliso.

Umfanekiso we-6页-36
6页-35

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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