I-4 Intshi ye-GaAs Wafer evela kwi-VET Energy yinto ebalulekileyo kwi-high-speed kunye nezixhobo ze-optoelectronic, kubandakanywa ii-amplifiers ze-RF, ii-LED, kunye neeseli zelanga. Ezi ziqwenga ziyaziwa ngokushukuma kwazo okuphezulu kwe-electron kunye nokukwazi ukusebenza kumaza aphezulu, okuwenza abe yinxalenye ephambili kwizicelo ze-semiconductor eziphambili. Amandla e-VET aqinisekisa ii-wafers ze-GaAs ezikumgangatho ophezulu ezinobunzima obufanayo kunye neziphene ezincinci, ezifanelekileyo kuluhlu lweenkqubo zokwenziwa kwemveliso.
Ezi Wafers ze-Intshi ze-4 ze-GaAs ziyahambelana nezixhobo ezahlukeneyo ze-semiconductor ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, kunye ne-SiN Substrate, ibenza babe ngeendlela ezahlukeneyo zokudityaniswa kwi-architecture yezixhobo ezahlukeneyo. Nokuba isetyenziselwa imveliso ye-Epi Wafer okanye ecaleni kwezixhobo zokusika ezinje nge-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, zibonelela ngesiseko esithembekileyo se-elektroniki yesizukulwana esilandelayo. Ukongeza, ii-wafers zihambelana ngokupheleleyo neenkqubo zokuphatha ezisekelwe kwiCassette, ziqinisekisa ukusebenza kakuhle kuzo zombini uphando kunye neendawo zokuvelisa umthamo ophezulu.
I-VET Energy inikezela ngepotfoliyo ebanzi yee-semiconductor substrates, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, kunye ne-AlN Wafer. Umgca wethu weemveliso ezahlukeneyo ubonelela kwiimfuno zezicelo ezahlukeneyo ze-elektroniki, ukusuka kumbane we-elektroniki ukuya kwi-RF kunye ne-optoelectronics.
Amandla e-VET abonelela ngee-wafers ze-GaAs ezinokwenziwa ngokwezifiso ukuze zihlangabezane neemfuno zakho ezithile, kubandakanywa amanqanaba ahlukeneyo e-doping, uqhelaniso, kunye nokugqitywa komphezulu. Iqela lethu leengcali libonelela ngenkxaso yobugcisa kunye nenkonzo emva kokuthengisa ukuqinisekisa impumelelo yakho.


IINGCACISO ZOKUXHAPHAZA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |


-
Uxinaniso oluphezulu lwephepha legraphite eliguquguqukayo legraphite s...
-
Ibhetri yeUAV Isebenzisa iiSeli zeFuel zeHydrogen zePem
-
Ikhithi ye-Hydrogen ye-Fuel Reactor Ukuphumelela okuphezulu kunye ne-G...
-
Ukunyibilika kweMetal elungiselelwe i-SIC Ingot Mould, iSilico...
-
iseli yepetroli, isixhobo esikhethekileyo sokuvavanya i-perf...
-
IGraphite/ICarbon Fiber eLukiweyo iNtambo yeVacuum F...