4 Intshi GaAs Wafer

Inkcazelo emfutshane:

I-VET Energy 4 intshi ye-GaAs wafer yi-high-purity semiconductor substrate eyaziwayo ngeempawu zayo ze-elektroniki ezigqwesileyo, iyenza ibe lolona khetho lufanelekileyo kuluhlu olubanzi lwezicelo. Amandla e-VET asebenzisa ubuchule obuphambili bokukhula kwekristale ukuvelisa ii-wafers ze-GaAs ezinokufana okukhethekileyo, ingxinano ephantsi yesiphene, kunye namanqanaba achanekileyo edoping.


Iinkcukacha zeMveliso

Iithegi zeMveliso

I-4 Intshi ye-GaAs Wafer evela kwi-VET Energy yinto ebalulekileyo kwi-high-speed kunye nezixhobo ze-optoelectronic, kubandakanywa ii-amplifiers ze-RF, ii-LED, kunye neeseli zelanga. Ezi ziqwenga ziyaziwa ngokushukuma kwazo okuphezulu kwe-electron kunye nokukwazi ukusebenza kumaza aphezulu, okuwenza abe yinxalenye ephambili kwizicelo ze-semiconductor eziphambili. Amandla e-VET aqinisekisa ii-wafers ze-GaAs ezikumgangatho ophezulu ezinobunzima obufanayo kunye neziphene ezincinci, ezifanelekileyo kuluhlu lweenkqubo zokwenziwa kwemveliso.

Ezi Wafers ze-Intshi ze-4 ze-GaAs ziyahambelana nezixhobo ezahlukeneyo ze-semiconductor ezifana ne-Si Wafer, i-SiC Substrate, i-SOI Wafer, kunye ne-SiN Substrate, ibenza babe ngeendlela ezahlukeneyo zokudityaniswa kwi-architecture yezixhobo ezahlukeneyo. Nokuba isetyenziselwa imveliso ye-Epi Wafer okanye ecaleni kwezixhobo zokusika ezinje nge-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, zibonelela ngesiseko esithembekileyo se-elektroniki yesizukulwana esilandelayo. Ukongeza, ii-wafers zihambelana ngokupheleleyo neenkqubo zokuphatha ezisekelwe kwiCassette, ziqinisekisa ukusebenza kakuhle kuzo zombini uphando kunye neendawo zokuvelisa umthamo ophezulu.

I-VET Energy inikezela ngepotfoliyo ebanzi yee-semiconductor substrates, kuquka i-Si Wafer, i-SiC Substrate, i-SOI Wafer, i-SiN Substrate, i-Epi Wafer, i-Gallium Oxide Ga2O3, kunye ne-AlN Wafer. Umgca wethu weemveliso ezahlukeneyo ubonelela kwiimfuno zezicelo ezahlukeneyo ze-elektroniki, ukusuka kumbane we-elektroniki ukuya kwi-RF kunye ne-optoelectronics.

Amandla e-VET abonelela ngee-wafers ze-GaAs ezinokwenziwa ngokwezifiso ukuze zihlangabezane neemfuno zakho ezithile, kubandakanywa amanqanaba ahlukeneyo e-doping, uqhelaniso, kunye nokugqitywa komphezulu. Iqela lethu leengcali libonelela ngenkxaso yobugcisa kunye nenkonzo emva kokuthengisa ukuqinisekisa impumelelo yakho.

Umfanekiso we-6页-36
Umfanekiso we-6页-35

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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