I-VET Energy i-12-intshi ye-SOI yafer sisixhobo se-semiconductor substrate esisebenza kakhulu, esithandwa kakhulu ngenxa yeempawu zayo zombane ezibalaseleyo kunye nesakhiwo esisodwa. Amandla e-VET asebenzisa iinkqubo zokwenziwa kwe-SOI ye-wafer ephucukileyo ukuqinisekisa ukuba i-wafer inokuvuza okuphantsi kakhulu ngoku, isantya esiphezulu kunye nokumelana nemitha, ibonelela ngesiseko esiluqilima kwiisekethe zakho ezisebenza ngokuphezulu ezidibeneyo.
Umgca wemveliso we-VET Energy awukhawulelwanga kwii-wafers ze-SOI. Sikwabonelela ngoluhlu olubanzi lwezixhobo zesemiconductor substrate, kubandakanya iSi Wafer, iSiC Substrate, iSiN Substrate, iEpi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, iRF, abenzi boluvo kunye namanye amacandelo.
Ukuqwalasela ukugqwesa, ii-wafers zethu ze-SOI nazo zisebenzisa izinto eziphambili ezifana ne-gallium oxide Ga2O3, iikhasethi kunye ne-AlN wafers ukuqinisekisa ukuthembeka nokusebenza kakuhle kuwo wonke umgangatho wokusebenza. Thembela kwi-VET Energy ukuba ibonelele ngezisombululo ezikumgangatho ophezulu ezivula indlela yokuqhubela phambili kwezobuchwepheshe.
Khulula amandla eprojekthi yakho ngokusebenza okugqwesileyo kweVET Energy 12-intshi ye-SOI wafers. Yongeza izakhono zakho zokuqamba izinto ezintsha ngeewafers ezibandakanya umgangatho, ukuchaneka kunye nokuqamba izinto ezintsha, ubeka isiseko sempumelelo kwicandelo eliguqukayo letekhnoloji ye-semiconductor. Khetha Amandla e-VET kwizisombululo ze-SOI ze-wafer zeprimiyamu ezidlula ulindelo.
IINGCACISO ZOKWENZAKALELAYO
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
I-Bow(GF3YFCD)-Ixabiso elipheleleyo | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
I-LTV(SBIR)-10mmx10mm | <2μm | ||||
Umda weWafer | Beveling |
UBUPHAKAMBE GQIBELA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Into | 8-intshi | 6-Intshi | 4-intshi | ||
nP | n-Pm | n-Nd | SI | SI | |
Umphezulu Gqiba | Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP | ||||
Ubunzima boMphezulu | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
IiChips zoMda | Akukho okuvumelekileyo (ubude nobubanzi≥0.5mm) | ||||
Iindenti | Akukho Ivumelekileyo | ||||
Imikrwelo(Si-Face) | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | Ubuninzi.≤5,Yongezeleka | ||
Iintanda | Akukho Ivumelekileyo | ||||
Ukungabandakanywa kuMda | 3mm |