I-intshi ye-4 ye-GaN kwi-SiC Wafer

Inkcazelo emfutshane:

I-VET Energy's 4-intshi ye-GaN kwi-SiC wafer yimveliso yoguqulo kwicandelo lombane wombane. Esi siqwengana se-wafer sidibanisa i-thermal conductivity egqwesileyo ye-silicon carbide (i-SiC) kunye noxinano lwamandla aphezulu kunye nelahleko ephantsi ye-gallium nitride (i-GaN), iyenza ibe lolona khetho lufanelekileyo lokwenza izixhobo ezisebenza ngamandla aphezulu, amandla aphezulu. I-VET Energy iqinisekisa ukusebenza kakuhle kunye nokuhambelana kwe-wafer ngokusebenzisa iteknoloji ye-MOCVD epitaxial.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgca wemveliso we-VET Energy awuphelelanga kwi-GaN kwii-wafers ze-SiC. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanywa iSi Wafer, iSiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ukongeza, sikwaphuhlisa izixhobo ezintsha ze-semiconductor ze-bandgap, ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN I-Wafer, ukuhlangabezana nemfuno yeshishini le-elektroniki lexesha elizayo lezixhobo zokusebenza eziphezulu.

I-VET Amandla ibonelela ngeenkonzo eziguquguqukayo zokwenza ngokwezifiso, kwaye inokwenza ngokwezifiso i-GaN epitaxial layers yobunzima obahlukeneyo, iintlobo ezahlukeneyo ze-doping, kunye nobukhulu obuhlukeneyo be-wafer ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi ngokukhawuleza baphuhlise izixhobo zombane ezisebenza ngamandla.

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
Into	nP	n-Pm	n-Nd	SI	SI
TTV(GBIR)	≤6um	≤6um
I-Bow(GF3YFCD)-Ixabiso elipheleleyo	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
Wafer Edge	Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
	nP	n-Pm	n-Nd	SI	SI
Umphezulu Gqiba	Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP
Ubunzima boMphezulu	(10um x 10um) Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
IiChips zoMda	Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)
Iindenti	Akukho Ivumelekileyo
Imikrwelo(Si-Face)	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter			Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter
Iintanda	Akukho Ivumelekileyo
Ukungabandakanywa kuMda	3mm