I-6 Intshi ye-P Uhlobo lweSilicon Wafer

Inkcazelo emfutshane:

I-VET Energy I-6-intshi ye-P-uhlobo lwe-silicon wafer yimathiriyeli ekumgangatho ophezulu we-semiconductor, esetyenziswa ngokubanzi kukwenziwa kwezixhobo zombane ezahlukeneyo. Amandla e-VET asebenzisa inkqubo yokukhula kwe-CZ ephucukileyo ukuqinisekisa ukuba iwafer inomgangatho ogqwesileyo wekristale, ingxinano ephantsi yesiphene kunye nokufana okuphezulu.

Thumela i-imeyile kuthi Khuphela njengePDF

Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgca wemveliso we-VET Energy awuphelelanga kwii-silicon wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, amaza omoya, abenzi boluvo kunye namanye amacandelo.

Imimandla yesicelo:
•Iisekethe ezidityanisiweyo:Njengomathiriyeli osisiseko wokwenziwa kwesekethe edibeneyo, uhlobo lwe-P-silicon wafers lusetyenziswa ngokubanzi kwiisekethe ezinengqondo ezahlukeneyo, iinkumbulo, njl.
•Izixhobo zamandla:Iziphaluka zesilicon zohlobo lwe-P zingasetyenziselwa ukwenza izixhobo zamandla ezifana neetransistors zamandla kunye neediode.
•Iinzwa:I-P-type wafers ye-silicon ingasetyenziselwa ukwenza iintlobo ezahlukeneyo zezivamvo, ezifana nezinzwa zoxinzelelo, izinzwa zobushushu, njl.
•Iiseli zelanga:I-P-type silicon wafers yinxalenye ebalulekileyo yeeseli zelanga.

I-VET Amandla ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo, kwaye zinokwenza ngokwezifiso ii-wafers ezinokumelana neentlobo ezahlukeneyo, umxholo we-oksijini owahlukileyo, ubukhulu obahlukileyo kunye nezinye iinkcukacha ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo kwinkqubo yemveliso.

IINGCACISO ZOKWENZAKALELAYO

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
Into	nP	n-Pm	n-Nd	SI	SI
TTV(GBIR)	≤6um	≤6um
I-Bow(GF3YFCD)-Ixabiso elipheleleyo	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
Umda weWafer	Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
	nP	n-Pm	n-Nd	SI	SI
Umphezulu Gqiba	Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP
Ubunzima boMphezulu	(10um x 10um) Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
IiChips zoMda	Akukho okuvumelekileyo (ubude nobubanzi≥0.5mm)
Iindenti	Akukho Ivumelekileyo
Imikrwelo(Si-Face)	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter			Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter
Iintanda	Akukho Ivumelekileyo
Ukungabandakanywa kuMda	3mm