6 Intshi P Uhlobo lweSilicon Wafer

Inkcazelo emfutshane:

I-VET Energy I-6-intshi ye-P-uhlobo lwe-silicon wafer yimathiriyeli ekumgangatho ophezulu we-semiconductor, esetyenziswa ngokubanzi kukwenziwa kwezixhobo zombane ezahlukeneyo. Amandla e-VET asebenzisa inkqubo yokukhula kwe-CZ ephucukileyo ukuqinisekisa ukuba iwafer inomgangatho ogqwesileyo wekristale, ingxinano ephantsi yesiphene kunye nokufana okuphezulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgca wemveliso we-VET Energy awuphelelanga kwii-silicon wafers. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya i-SiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ezi mveliso zinokuhlangabezana neemfuno zesicelo zabathengi abahlukeneyo kumandla ombane, amaza omoya, abenzi boluvo kunye namanye amacandelo.

Imimandla yesicelo:
Iisekethe ezidityanisiweyo:Njengomathiriyeli osisiseko wokwenziwa kwesekethe edibeneyo, uhlobo lwe-P-silicon wafers lusetyenziswa ngokubanzi kwiisekethe ezinengqondo ezahlukeneyo, iinkumbulo, njl.
Izixhobo zamandla:Iziphaluka zesilicon zohlobo lwe-P zingasetyenziselwa ukwenza izixhobo zamandla ezifana neetransistors zamandla kunye neediode.
Iinzwa:I-P-type wafers ye-silicon ingasetyenziselwa ukwenza iintlobo ezahlukeneyo zezivamvo, ezifana nezinzwa zoxinzelelo, izinzwa zobushushu, njl.
Iiseli zelanga:I-P-type silicon wafers yinxalenye ebalulekileyo yeeseli zelanga.

I-VET Amandla ibonelela abathengi ngezisombululo ze-wafer ezilungiselelweyo, kwaye zinokwenza ngokwezifiso ii-wafers ezinokumelana neentlobo ezahlukeneyo, umxholo we-oksijini owahlukileyo, ubukhulu obahlukileyo kunye nezinye iinkcukacha ngokweemfuno ezithile zabathengi. Ukongeza, sikwabonelela ngenkxaso yobuchwephesha kunye nenkonzo emva kokuthengisa ukunceda abathengi basombulule iingxaki ezahlukeneyo abadibana nazo kwinkqubo yemveliso.

Umfanekiso we-6页-36
6页-35

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

TTV(GBIR)

≤6um

≤6um

I-Bow(GF3YFCD)-Ixabiso elipheleleyo

≤15μm

≤15μm

≤25μm

≤15μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40μm

≤25μm

I-LTV(SBIR)-10mmx10mm

<2μm

Wafer Edge

Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into

8-intshi

6-Intshi

4-intshi

nP

n-Pm

n-Nd

SI

SI

Umphezulu Gqiba

Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP

Ubunzima boMphezulu

(10um x 10um) Si-FaceRa≤0.2nm
I-C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
I-C-Face Ra≤0.5nm

IiChips zoMda

Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)

Iindenti

Akukho Ivumelekileyo

Imikrwelo(Si-Face)

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Ubuninzi.≤5,Yongezeleka
Ubude≤0.5×i-wafer diameter

Iintanda

Akukho Ivumelekileyo

Ukungabandakanywa kuMda

3mm

ubuchwephesha_1_2_ubungakanani
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