I-Silicon Carbide (SiC) i-Epitaxial Wafer

I-VET Energy silicon carbide (SiC) i-epitaxial wafer yimathiriyeli ye-semiconductor ebanzi ebanzi esebenza kakhulu enokumelana nobushushu obuphezulu, i-frequency ephezulu kunye neempawu zamandla aphezulu. Yi-substrate efanelekileyo kwisizukulwana esitsha sezixhobo zombane zamandla. I-VET Amandla isebenzisa iteknoloji ye-MOCVD epitaxial ephucukileyo ukukhula umgangatho ophezulu we-SiC epitaxial layers kwii-substrates ze-SiC, ukuqinisekisa ukusebenza okugqwesileyo kunye nokuhambelana kwe-wafer.

I-Silicon Carbide yethu (i-SiC) ye-Epitaxial Wafer inikezela ngokuhambelana okugqwesileyo kunye nezixhobo ezahlukeneyo ze-semiconductor ezibandakanya i-Si Wafer, i-SiC Substrate, i-SOI Wafer, kunye ne-SiN Substrate. Ngomaleko wayo owomeleleyo we-epitaxial, ixhasa iinkqubo eziphambili ezifana nokukhula kwe-Epi Wafer kunye nokudityaniswa nezinto ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN Wafer, iqinisekisa ukusetyenziswa ngeendlela ezahlukeneyo kwiitekhnoloji ezahlukeneyo. Eyilwe ukuba ihambelane ne-industry-standard Cassette handling systems, iqinisekisa ukusebenza ngokufanelekileyo kunye nokulungelelaniswa kwemisebenzi kwiindawo zokwenziwa kwe-semiconductor.

Umgca wemveliso we-VET Energy awuphelelanga kwii-wafers ze-SiC epitaxial. Sikwabonelela ngoluhlu olubanzi lwezixhobo ze-semiconductor substrate, kubandakanya iSi Wafer, iSiC Substrate, i-SOI Wafer, iSiN Substrate, i-Epi Wafer, njl. Ukongeza, sikwaphuhlisa izixhobo ezintsha ze-semiconductor ze-bandgap, ezifana ne-Gallium Oxide Ga2O3 kunye ne-AlN I-Wafer, ukuhlangabezana nemfuno yeshishini le-elektroniki lexesha elizayo lezixhobo zokusebenza eziphezulu.