SiC Coating / Coated Graphite Substrate/Tray bakeng sa Semiconductor

SiC Coating/Coated Graphite Substrate/Tray for Semiconductor Featured Image

Tlhaloso e Khutšoanyane:

VET Energy SiC Coated Graphite Susceptor for Epitaxial Growth ke sehlahisoa se sebetsang hantle se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele.E na le ho hanyetsa mocheso o motle haholo le ho tšoana ha mocheso, bohloeki bo phahameng, ho hanyetsa khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lisebelisoa tsa ho lokisa li-wafer.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

SiC e koahetsoeng / e koahetsoeng ka susceptor ea Graphite bakeng sa Semiconductor

SiC Coated Graphite Susceptor ke karolo ea bohlokoa e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea semiconductor.Re sebelisa theknoloji ea rona e nang le tokelo ea molao ho etsa hore sepalangoang sa silicon carbide se be le bohloeki bo phahameng ka ho fetisisa, ho ts'oaroa ka mokhoa o ts'oanang hantle le bophelo bo botle ba ts'ebeletso, hammoho le ho hanyetsa lik'hemik'hale tse phahameng le thepa ea botsitso ba mocheso.

Likaroloana:
· Excellent Thermal Shock Resistance
· Ho Hanyetsa 'Mele ho Hlollang ka ho Fetisisa
· Excellent Chemical Resistance
· Bohloeki bo Phahameng ka ho Fetisisa
· Ho fumaneha ka Sebopeho se Felletseng
· E ka sebelisoa tlas'a Atmosphere ea Oxidizing

Kopo:

Maemo a Tloaelehileng a Base Graphite Material:

Tekano e Hlahang:	1.85 g/cm3
Ho hanyetsa Motlakase:	11 μΩm
Flexural Strenth:	49 MPa (500kgf/cm2)
Bothata ba Lebōpo:	58
Molora:	<5ppm
Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Tloaelehileng Value
晶体结构 / Crystal Structure	FCC β phase 多晶，主要為(111）取向)
密度 / Density	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (500g mojaro)
晶粒大小 / Grain SiZe	2 ~ 10μm
纯度 / Chemical Purity	99.99995%
热容 / Heat Capacity	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Strength	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / Thermal Conductivity	300Wm^-1·K^-1
热膨胀系数 / Thermal Expansion(CTE)	4.5×10^-6K^-1

VET Energy ke moetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse nang le liphahlo tse fapaneng tse kang SiC coating, TaC coating, glassy coating, pyrolytic carbon coating, joalo-joalo, e ka fana ka likarolo tse fapaneng tse hlophisitsoeng bakeng sa indasteri ea semiconductor le photovoltaic.

Sehlopha sa rona sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka u fa litharollo tsa lisebelisoa tse eketsehileng bakeng sa hau.

Re ntse re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele, 'me re entse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama lipakeng tsa pente le substrate e tiee le hore e se ke ea oela habonolo.

Re u amohela ka mofuthu hore u etele feme ea rona, ha re buisaneng ka ho eketsehileng!