Silicon Carbide Epitaxial Sheet Tray Bakeng sa Semiconductor Epitaxial Furnace

Tlhaloso e Khutšoanyane:

VET Energy Silicon Carbide Epitaxial Sheet Tray ke sehlahisoa se sebetsang hantle se etselitsoeng ho fana ka ts'ebetso e tsitsitseng le e tšepahalang ka nako e telele. E na le ho hanyetsa mocheso o motle haholo le ho tšoana ha mocheso, bohloeki bo phahameng, ho hanyetsa khoholeho ea mobu, e leng se etsang hore e be tharollo e phethahetseng bakeng sa lisebelisoa tsa ho lokisa li-wafer.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Silicon carbide sheet tray ke karolo ea bohlokoa e sebelisoang lits'ebetsong tse fapaneng tsa tlhahiso ea semiconductor. Re sebelisa theknoloji ea rona e nang le tokelo ea molao ho etsa terei ea silicon carbide e nang le bohloeki bo phahameng ka ho fetesisa, ho ts'oana hantle ha moaparo le bophelo bo botle ba ts'ebeletso, hammoho le ho hanyetsa lik'hemik'hale tse phahameng le thepa ea botsitso ba mocheso.

VET Energy ke moetsi oa 'nete oa lihlahisoa tsa graphite le silicon carbide tse nang le liphahlo tse fapaneng tse kang SiC, Tac, pyrolytic carbon, glassy carbon, joalo-joalo, e ka fana ka likarolo tse fapaneng tse hlophisitsoeng bakeng sa indasteri ea semiconductor le photovoltaic. Sehlopha sa rona sa tekheniki se tsoa litsing tse phahameng tsa lipatlisiso tsa lapeng, se ka u fa litharollo tsa lisebelisoa tse eketsehileng bakeng sa hau.

Re ntse re tsoela pele ho nts'etsapele lits'ebetso tse tsoetseng pele ho fana ka lisebelisoa tse tsoetseng pele, 'me re entse theknoloji e ikhethileng e nang le tokelo ea molao, e ka etsang hore maqhama lipakeng tsa pente le substrate e tiee le hore e se ke ea oela habonolo.

Likarolo tsa lihlahisoa tsa rona:

1. Ho hanyetsa mocheso o phahameng oa oxidation ho fihlela ho 1700 ℃.
2. Bohloeki bo phahameng le ho tšoana ha mocheso
3. Ho hanyetsa kutu e ntle haholo: acid, alkali, letsoai le li-reagents tsa manyolo.
4. Boima bo phahameng, bokaholimo bo kopanetsoeng, likaroloana tse ntle.
5. Bophelo bo bolelele ba tšebeletso le bo tšoarellang haholoanyane

CVD SiC薄膜基本物理性能 Lintho tsa motheo tsa 'mele tsa CVD SiCho roala
性质 / Thepa	典型数值 / Boleng bo Tlwaelehileng
晶体结构 / Sebopeho sa Crystal	FCC mohato oa β多晶，主要為（111）取向
密度 / Ho teteana	3.21 g/cm³
硬度 / Ho thatafala	2500 维氏硬度 (moroalo oa 500g)
晶粒大小 / Mabele SiZe	2 ~ 10μm
纯度 / Bohloeki ba lik'hemik'hale	99.99995%
热容 / Bokhoni ba mocheso	640 J·kg^-1·K^-1
升华温度 / Sublimation Mocheso	2700 ℃
抗弯强度 / Flexural Matla	415 MPa RT 4-ntlha
杨氏模量 / Young's Modulus	430 Gpa 4pt kobeha, 1300 ℃
导热系数 / ThermalBoikhantšo	300Wm^-1·K^-1
热膨胀系数 / Katoloso ea Mocheso(CTE)	4.5×10^-6K^-1