GaN ho Silicon Wafer bakeng sa RF

Tlhaloso e Khutšoanyane:

GaN on Silicon Wafer bakeng sa RF, e fanoeng ke VET Energy, e etselitsoe ho ts'ehetsa lits'ebetso tsa radio frequency (RF) tsa maemo a holimo. Li-wafers tsena li kopanya melemo ea Gallium Nitride (GaN) le Silicon (Si) ho fana ka ts'ebetso e ntle ea mocheso le matla a phahameng a matla, e leng se etsang hore e be tse loketseng likarolo tsa RF tse sebelisoang mekhoeng ea puisano ea mehala, radar le sathelaete. VET Energy e netefatsa hore sephaphatha se seng le se seng se kopana le litekanyetso tse phahameng ka ho fetisisa tse hlokahalang bakeng sa masela a tsoetseng pele a semiconductor.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

VET Energy GaN ho Silicon Wafer ke tharollo ea semiconductor e hahelletsoeng ka kotloloho bakeng sa lits'ebetso tsa radio frequency (RF). Ka ho holisa gallium nitride ea boleng bo holimo (GaN) ea boleng bo holimo ka sekhahla sa silicon substrate, VET Energy e fana ka sethala se sebetsang hantle le se sebetsang hantle bakeng sa lisebelisoa tse fapaneng tsa RF.

Sephaphatha sena sa GaN ho Silicon se tsamaisana le lisebelisoa tse ling tse kang Si Wafer, SiC Substrate, SOI Wafer, le SiN Substrate, e holisa ho tenyetseha ha eona bakeng sa lits'ebetso tse fapaneng tsa masela. Ho feta moo, e ntlafalitsoe hore e sebelisoe le Epi Wafer le lisebelisoa tse tsoetseng pele joalo ka Gallium Oxide Ga2O3 le AlN Wafer, tse ntlafatsang ts'ebeliso ea eona ho lisebelisoa tsa elektroniki tse matla haholo. Li-wafers li etselitsoe ho kopanngoa ka mokhoa o se nang moeli ho litsamaiso tsa tlhahiso li sebelisa mokhoa o tloaelehileng oa ho tšoara Cassette bakeng sa tšebeliso e bonolo le ho eketsa katleho ea tlhahiso.

VET Energy e fana ka potefolio e felletseng ea li-semiconductor substrates, ho kenyeletsoa Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, le AlN Wafer. Lihlahisoa tsa rona tse fapaneng li fana ka litlhoko tsa lits'ebetso tse fapaneng tsa elektroniki, ho tloha ho lisebelisoa tsa motlakase ho isa ho RF le optoelectronics.

GaN ho Silicon Wafer e fana ka melemo e mengata bakeng sa lits'ebetso tsa RF:

• Ts'ebetso ea maqhubu a holimo:Phapang e pharaletseng ea GaN le ho tsamaea ha elektronike e phahameng li nolofalletsa ho sebetsa ka maqhubu a phahameng, ho etsa hore e be e loketseng bakeng sa 5G le mekhoa e meng ea puisano e potlakileng.
• Matla a phahameng a matla:Lisebelisoa tsa GaN li ka sebetsana le matla a phahameng a matla ha a bapisoa le lisebelisoa tse tloaelehileng tsa silicon, tse lebisang lits'ebetsong tse sebetsang hantle tsa RF.
• Tšebeliso e tlase ea matla:Lisebelisoa tsa GaN li bonts'a tšebeliso e tlase ea matla, e hlahisang matla a matla a matla le ho fokotsa mocheso o fokolang.

Lisebelisoa:

• Khokahano ea waelese ea 5G:GaN ho li-wafers tsa Silicon li bohlokoa bakeng sa ho aha liteishene tsa 5G tse sebetsang hantle haholo le lisebelisoa tsa mehala.
• Sistimi ea radar:Li-amplifiers tsa RF tse thehiloeng ho GaN li sebelisoa lits'ebetsong tsa radar bakeng sa ts'ebetso ea tsona e phahameng le bandwidth e pharaletseng.
• Puisano ka satellite:Lisebelisoa tsa GaN li nolofalletsa mekhoa ea puisano ea sathelaete e matla le e phahameng haholo.
• Lisebelisoa tsa elektroniki tsa sesole:Likarolo tsa RF tse thehiloeng ho GaN li sebelisoa lits'ebetsong tsa sesole joalo ka ntoa ea elektroniki le sistimi ea radar.

VET Energy e fana ka GaN e ka tloahelehang ho li-wafers tsa Silicon ho fihlela litlhoko tsa hau tse ikhethileng, ho kenyeletsoa maemo a fapaneng a doping, botenya le boholo ba liphaephe. Sehlopha sa rona sa litsebi se fana ka ts'ehetso ea tekheniki le ts'ebeletso ea morao-rao ea thekiso ho netefatsa katleho ea hau.

LIEKETSENG MATS'OA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
Ntho	nP	n-Pm	n-Pes	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Boleng bo Felletseng	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SEBAKA PHETHA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-Pes	SI	SI
Surface Finish	Mahlakore a mabeli a Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Li-Chips tsa Edge	Ha ho e dumellwe (bolelele le bophara≥0.5mm)
Li-indent	Ha ho le e 'ngoe e Lumelloang
Scratches(Si-Face)	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer			Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer
Mapetso	Ha ho le e 'ngoe e Lumelloang
Kenyelletso ea Edge	3mm