6 Inch N Mofuta oa SiC Wafer

Tlhaloso e Khutšoanyane:

Mofuta oa SiC Wafer oa 6 Inch N o tsoang ho VET Energy ke setsi sa tšebetso se phahameng se etselitsoeng lits'ebetso tse tsoetseng pele tsa semiconductor, se fanang ka ts'ebetso e phahameng ea mocheso le matla a matla. VET Energy e sebelisa mahlale a morao-rao ho hlahisa liphaephe tsa boleng bo holimo tse fihlelang litlhoko tse matla tsa lisebelisoa tsa elektroniki tsa sejoale-joale, tse netefatsang ts'epo le ho tšoarella ha lisebelisoa tsa motlakase.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Mofuta ona oa SiC Wafer ea 6 Inch N e etselitsoe ts'ebetso e ntlafalitsoeng maemong a feteletseng, e e etsa khetho e nepahetseng bakeng sa lits'ebetso tse hlokang matla a phahameng le ho hanyetsa mocheso. Lihlahisoa tsa bohlokoa tse amanang le sephae sena li kenyelletsa Si Wafer, SiC Substrate, SOI Wafer, le SiN Substrate. Lisebelisoa tsena li netefatsa ts'ebetso e nepahetseng lits'ebetsong tse fapaneng tsa tlhahiso ea li-semiconductor, tse nolofalletsang lisebelisoa tse sebetsang hantle le tse tšoarellang nako e telele.

Bakeng sa lik'hamphani tse sebetsang le Epi Wafer, Gallium Oxide Ga2O3, Cassette, kapa AlN Wafer, VET Energy's 6 Inch N Type SiC Wafer e fana ka motheo o hlokahalang bakeng sa nts'etsopele ea lihlahisoa tse ncha. Ebang ke ho lisebelisoa tsa elektronike tse matla haholo kapa tsa morao-rao tsa theknoloji ea RF, li-wafers tsena li netefatsa hore li sebetsa hantle haholo le ho hanyetsa mocheso o fokolang, li sutumelletsa meeli ea ts'ebetso le ts'ebetso.

LIEKETSENG MATS'OA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
Ntho	nP	n-Pm	n-Pes	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Boleng bo Felletseng	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SEBAKA PHETHA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-Pes	SI	SI
Surface Finish	Mahlakore a mabeli a Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Li-Chips tsa Edge	Ha ho e dumellwe (bolelele le bophara≥0.5mm)
Li-indent	Ha ho le e 'ngoe e Lumelloang
Scratches(Si-Face)	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer			Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer
Mapetso	Ha ho le e 'ngoe e Lumelloang
Kenyelletso ea Edge	3mm