Bohloeki bo phahameng 8 Inch Silicon Wafer

Tlhaloso e Khutšoanyane:

Li-wafers tsa silicon tse phahameng tsa 8-inch tsa VET Energy ke khetho ea hau e nepahetseng bakeng sa tlhahiso ea semiconductor. Li entsoe ka theknoloji e tsoetseng pele, li-wafers tsena li na le boleng bo botle ba kristale le bokhabane ba holim'a metsi, li etsa hore li tšoanelehe bakeng sa ho etsa lisebelisoa tse fapaneng tsa microelectronic.

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Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Li-wafers tsa silicon tsa 8-inch tsa VET Energy li sebelisoa haholo ho lisebelisoa tsa motlakase tsa motlakase, li-sensor, li-circuits tse kopaneng le likarolo tse ling. Joaloka moetapele indastering ea semiconductor, re ikemiselitse ho fana ka lihlahisoa tsa boleng bo holimo tsa Si Wafer ho fihlela litlhoko tse ntseng li eketseha tsa bareki ba rona.

Ntle le Si Wafer, VET Energy e boetse e fana ka lisebelisoa tse ngata tse fapaneng tsa semiconductor substrate, ho kenyeletsoa SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, joalo-joalo. Sehlahisoa sa rona se boetse se akaretsa lisebelisoa tse ncha tse pharaletseng tsa semiconductor tse kang Gallium Oxide Ga2O3 le AlN. Wafer, e fanang ka ts'ehetso e matla bakeng sa nts'etsopele ea lisebelisoa tsa motlakase tsa motlakase tsa moloko o latelang.

VET Energy e na le lisebelisoa tse tsoetseng pele tsa tlhahiso le sistimi e felletseng ea taolo ea boleng ho netefatsa hore sephaphatha ka seng se kopana le maemo a thata a indasteri. Lihlahisoa tsa rona ha li na lisebelisoa tse ntle tsa motlakase feela, empa hape li na le matla a matle a mochine le botsitso ba mocheso.

VET Energy e fa bareki litharollo tsa liphaephe tse ikhethileng, ho kenyeletsoa liphaephe tsa boholo bo fapaneng, mefuta le likhakanyo tsa doping. Ntle le moo, re boetse re fana ka ts'ehetso ea botekgeniki le ts'ebeletso ea morao-rao ho thusa bareki ho rarolla mathata a fapaneng a kopaneng nakong ea tlhahiso.

LIEKETSENG MATS'OA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
Ntho	nP	n-Pm	n-Pes	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Boleng bo Felletseng	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SEBAKA PHETHA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-Pes	SI	SI
Surface Finish	Mahlakore a mabeli a Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Li-Chips tsa Edge	Ha ho e dumellwe (bolelele le bophara≥0.5mm)
Li-indent	Ha ho le e 'ngoe e Lumelloang
Scratches(Si-Face)	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer			Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer
Mapetso	Ha ho le e 'ngoe e Lumelloang
Kenyelletso ea Edge	3mm