4 Inch GaN ho SiC Wafer

Tlhaloso e Khutšoanyane:

VET Energy's 4-inch GaN ho SiC wafer ke sehlahisoa sa phetoho lefapheng la lisebelisoa tsa motlakase. Sephaphatha sena se kopanya mocheso o motle haholo oa silicon carbide (SiC) le matla a phahameng a matla le tahlehelo e tlase ea gallium nitride (GaN), e leng khetho e nepahetseng bakeng sa ho etsa lisebelisoa tse phahameng, tse matla haholo. VET Energy e netefatsa ts'ebetso e ntle haholo le ts'ebetso e tsitsitseng ea sephaphatha ka theknoloji e tsoetseng pele ea MOCVD epitaxial.

Re romelle lengolo-tsoibila Khoasolla e le PDF

Lintlha tsa Sehlahisoa

Li-tag tsa Sehlahisoa

Mohala oa sehlahisoa oa VET Energy ha o felle feela ho GaN ho li-wafers tsa SiC. Re boetse re fana ka mefuta e mengata e fapaneng ea lisebelisoa tsa semiconductor substrate, ho kenyeletsoa Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, joalo-joalo. Ho feta moo, re ntse re nts'etsapele lisebelisoa tse ncha tse pharalletseng tsa semiconductor tse kang Gallium Oxide Ga2O3 le AlN. Wafer, ho fihlela tlhoko ea indasteri ea motlakase ea kamoso ea lisebelisoa tse phahameng tsa ts'ebetso.

VET Energy e fana ka lits'ebeletso tse feto-fetohang tsa maemo, 'me e khona ho etsa likarolo tsa GaN epitaxial tsa botenya bo fapaneng, mefuta e fapaneng ea li-doping, le saese e fapaneng ea wafer ho latela litlhoko tse ikhethileng tsa bareki. Ntle le moo, re fana ka ts'ehetso ea botekgeniki ea litsebi le ts'ebeletso ea morao-rao ea thekiso ho thusa bareki ho nts'etsapele lisebelisoa tsa elektroniki tse sebetsang hantle haholo.

LIEKETSENG MATS'OA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
Ntho	nP	n-Pm	n-Pes	SI	SI
TTV(GBIR)	≤6um	≤6um
Bow(GF3YFCD)-Boleng bo Felletseng	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
LTV(SBIR) -10mmx10mm	<2μm
Wafer Edge	Beveling

SEBAKA PHETHA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Ntho	8-Intshi	6-Intshi			4-Intshi
	nP	n-Pm	n-Pes	SI	SI
Surface Finish	Mahlakore a mabeli a Optical Polish, Si- Face CMP
SurfaceRoughness	(10um x 10um) Si-FaceRa≤0.2nm C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm C-Face Ra≤0.5nm
Li-Chips tsa Edge	Ha ho e dumellwe (bolelele le bophara≥0.5mm)
Li-indent	Ha ho le e 'ngoe e Lumelloang
Scratches(Si-Face)	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer	Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer			Kty.≤5, Kakaretso Bolelele≤0.5× bophara ba wafer
Mapetso	Ha ho le e 'ngoe e Lumelloang
Kenyelletso ea Edge	3mm