The 4 Inch GaAs Wafer e tsoang ho VET Energy ke thepa ea bohlokoa bakeng sa lisebelisoa tse lebelo le holimo le tsa optoelectronic, ho kenyeletsoa li-amplifiers tsa RF, li-LED le lisele tsa letsatsi. Li-wafers tsena li tsebahala ka ho tsamaea ha elektronike e phahameng le bokhoni ba ho sebetsa ka maqhubu a phahameng, e leng se etsang hore e be karolo ea bohlokoa lits'ebetsong tse tsoetseng pele tsa semiconductor. VET Energy e etsa bonnete ba hore li-wafers tsa boleng bo holimo tsa GaAs tse nang le botenya bo lekanang le bofokoli bo fokolang, tse loketseng mefuta e mengata ea lits'ebetso tse hlokang ho etsoa.
Li-Wafer tsena tsa 4 Inch GaAs li tsamaisana le lisebelisoa tse fapaneng tsa semiconductor tse kang Si Wafer, SiC Substrate, SOI Wafer, le SiN Substrate, e leng se etsang hore li feto-fetohe le maemo bakeng sa ho kopanngoa meahong e fapaneng ea lisebelisoa. Ebang e sebelisetsoa tlhahiso ea Epi Wafer kapa hammoho le lisebelisoa tsa morao-rao tse kang Gallium Oxide Ga2O3 le AlN Wafer, li fana ka motheo o tšepahalang oa lisebelisoa tsa elektroniki tsa moloko o latelang. Ho phaella moo, li-wafers li lumellana ka ho feletseng le mekhoa ea ho sebetsana le Cassette e thehiloeng ho li-Cassette, ho netefatsa hore ho sebetsa ka mokhoa o tsitsitseng ka bobeli lipatlisisong le libakeng tse ngata tsa tlhahiso ea lihlahisoa.
VET Energy e fana ka potefolio e felletseng ea li-semiconductor substrates, ho kenyeletsoa Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, le AlN Wafer. Lihlahisoa tsa rona tse fapaneng li fana ka litlhoko tsa lits'ebetso tse fapaneng tsa elektroniki, ho tloha ho lisebelisoa tsa motlakase ho isa ho RF le optoelectronics.
VET Energy e fana ka li-wafers tsa GaAs tse ka tloahelehang ho fihlela litlhoko tsa hau tse ikhethileng, ho kenyeletsoa maemo a fapaneng a doping, litloaelo le liphetho tsa bokaholimo. Sehlopha sa rona sa litsebi se fana ka ts'ehetso ea tekheniki le ts'ebeletso ea morao-rao ea thekiso ho netefatsa katleho ea hau.
LIEKETSENG MATS'OA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Ntho | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-Pes | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Bow(GF3YFCD)-Boleng bo Felletseng | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafer Edge | Beveling |
SEBAKA PHETHA
*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation
Ntho | 8-Intshi | 6-Intshi | 4-Intshi | ||
nP | n-Pm | n-Pes | SI | SI | |
Surface Finish | Mahlakore a mabeli a Optical Polish, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Li-Chips tsa Edge | Ha ho e dumellwe (bolelele le bophara≥0.5mm) | ||||
Li-indent | Ha ho le e 'ngoe e Lumelloang | ||||
Scratches(Si-Face) | Kty.≤5, Kakaretso | Kty.≤5, Kakaretso | Kty.≤5, Kakaretso | ||
Mapetso | Ha ho le e 'ngoe e Lumelloang | ||||
Kenyelletso ea Edge | 3mm |