SiC coated suscetpor chinhu chakakosha chinoshandiswa mune akasiyana semiconductor kugadzira maitiro. Isu tinoshandisa tekinoroji yedu ine patent kugadzira iyo SiC yakavharwa suscetpor nekuchena kwakanyanya, kunaka kwekupfeka kwakafanana uye hupenyu hwesevhisi hwakanakisa, pamwe nekukwirira kwemakemikari kuramba uye kugadzikana kwemafuta.
Zvimiro zvezvigadzirwa zvedu:
1. High tembiricha oxidation kuramba kusvika 1700 ℃.
2. Kuchena kwepamusoro uye kufanana kwekupisa
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu
| CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating | |
| 性质 / Property | 典型数值 / Typical Value |
| 晶体结构 / Crystal Mamiriro | FCC β chikamu多晶，主要為（111）取向 |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Kuoma | 2500 维氏硬度 (500g mutoro) |
| 晶粒大小 / Zviyo SiZe | 2~10μm |
| 纯度 / Kemikari Kuchena | 99.99995% |
| 热容 / Kupisa Kugona | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Flexural Simba | 415 MPa RT 4-poindi |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Kuwedzera Kupisa (CTE) | 4.5 × 10-6K-1 |
Tikugashirei noushamwari kuti ushanyire fekitari yedu, ngativei neimwe hurukuro!
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