SiC Coated Graphite Carrier / Susceptor

Tsanangudzo Pfupi

VET Energy SiC Coated Graphite Carrier/Susceptor chigadzirwa chepamusoro-soro chakagadzirirwa kupa kunoenderana uye kwakavimbika kuita kwenguva yakareba.Iyo ine yakanyanya kunaka kupisa kupisa uye kufananidzwa kwekupisa, kuchena kwepamusoro, kusamira kwevhu, zvichiita kuti ive mhinduro yakakwana yewafer processing application.

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SiC coated suscetpor chinhu chakakosha chinoshandiswa mune akasiyana semiconductor kugadzira maitiro.Isu tinoshandisa tekinoroji yedu ine patent kugadzira iyo SiC yakavharwa suscetpor nekuchena kwakanyanya, kunaka kwekupfeka kwakafanana uye hupenyu hwesevhisi hwakanakisa, pamwe nekukwirira kwemakemikari kuramba uye kugadzikana kwemafuta.

Zvimiro zvezvigadzirwa zvedu:

1. High tembiricha oxidation kuramba kusvika 1700 ℃.
2. Kuchena kwepamusoro uye kufanana kwekupisa
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu

CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Mamiriro	FCC β chikamu多晶，主要為（111）取向
密度 / Density	3.21 g/cm³
硬度 / Kuoma	2500 维氏硬度 (500g mutoro)
晶粒大小 / Zviyo SiZe	2~10μm
纯度 / Kemikari Kuchena	99.99995%
热容 / Kupisa Kugona	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Flexural Simba	415 MPa RT 4-poindi
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 / Kuwedzera Kupisa (CTE)	4.5 × 10^-6K^-1