Silicon carbide carrier trayis a keychikamu chinoshandiswa mumhando dzakasiyana-siyana dzekugadzira semiconductor.Isu tinoshandisa tekinoroji yedu ine patent kugadzira iyo silicon carbide mutakuri nayokuchena kwakanyanya,kugonacoatingkufananauye hupenyu hwesevhisi hwakanakisa, naizvozvowokukwirira kwemakemikari kuramba uye kupisa kwekugadzikana kwezvinhu.
VET Energy ndizvo themugadziri chaiye weakagadziridzwa graphite uye silicon carbide zvigadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvakagadzirirwa zvikamu zve semiconductor uye photovoltaic indasitiri. Our tekinoroji timu inobva kumatunhu epamusoro ekutsvagisa dzimba, inogona kupa mamwe hunyanzvi zvinhu mhindurozvako.
Isu tinoramba tichigadzira advanced process kuti tipe zvimwe zvepamberi zvinhu,uyevakagadzira yakasarudzika tekinoroji ine patent, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.
Fmadyiro ezvigadzirwa zvedu:
1. High tembiricha oxidation kuramba kusvika 1700℃.
2. Kuchena kwepamusoro uyethermal kufanana
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu
| CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating | |
| 性质 / Property | 典型数值 / Typical Value |
| 晶体结构 / Crystal Mamiriro | FCC β chikamu多晶，主要為（111）取向 |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Kuoma | 2500 维氏硬度 (500g mutoro) |
| 晶粒大小 / Zviyo SiZe | 2~10μm |
| 纯度 / Kemikari Kuchena | 99.99995% |
| 热容 / Kupisa Kugona | 640 J·kg-1·K-1 |
| 升华温度 / Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Flexural Simba | 415 MPa RT 4-poindi |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt bend, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Kuwedzera Kupisa (CTE) | 4.5 × 10-6K-1 |
Tikugashirei noushamwari kuti ushanyire fekitari yedu, ngativei neimwe hurukuro!
