Silicon Carbide Coated Graphite Susceptor ye LED Etching

Tsanangudzo Pfupi:

Silicon carbide susceptor ye LED etching (SiC tray) chinhu chakakosha chekuwedzera kune yakadzika silicon etching (ICP etching muchina). wafer carrier, inozivikanwawo sewafer carrier, silicon wafer carrier, inozivikanwawo sehomwe wafer. Inoshandiswa zvakanyanya mu semiconductor CVD uye vacuum sputtering.

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Silicon carbide coated susceptor iria keychikamu chinoshandiswa mumhando dzakasiyana-siyana dzekugadzira semiconductor.Isu tinoshandisa tekinoroji yedu ine patent kugadzira iyo silicon carbide yakavharwa susceptor nayokuchena kwakanyanya,kugonacoatingkufananauye hupenyu hwesevhisi hwakanakisa, naizvozvowokukwirira kwemakemikari kuramba uye kupisa kwekugadzikana kwezvinhu.

VET Energy ndizvo themugadziri chaiye weakagadziridzwa graphite uye silicon carbide zvigadzirwa neCVD coating,anogona kupazvakasiyana-siyanazvakagadzirirwa zvikamu zve semiconductor uye photovoltaic indasitiri. Our tekinoroji timu inobva kumatunhu epamusoro ekutsvagisa dzimba, inogona kupa mamwe hunyanzvi zvinhu mhindurozvako.

Isu tinoramba tichigadzira advanced process kuti tipe zvimwe zvepamberi zvinhu,uyevakagadzira yakasarudzika tekinoroji ine patent, iyo inogona kuita kuti chisungo pakati pekupotera neiyo substrate ive yakasimba uye isinganyanye kubatwa.

Fmadyiro ezvigadzirwa zvedu:

1. High tembiricha oxidation kuramba kusvika 1700℃.
2. Kuchena kwepamusoro uyethermal kufanana
3. Yakanakisa corrosion resistance: acid, alkali, munyu uye organic reagents.
4. Kuoma kwepamusoro, compact surface, yakanaka particles.
5. Hupenyu hurefu hwebasa uye hunogara kwenguva refu

CVD SiC薄膜基本物理性能 Basic zvemuviri zvimiro zveCVD SiCcoating
性质 / Property	典型数值 / Typical Value
晶体结构 / Crystal Mamiriro	FCC β chikamu多晶，主要為（111）取向
密度 / Density	3.21 g/cm³
硬度 / Kuoma	2500 维氏硬度 (500g mutoro)
晶粒大小 / Zviyo SiZe	2~10μm
纯度 / Kemikari Kuchena	99.99995%
热容 / Kupisa Kugona	640 J·kg^-1·K^-1
升华温度 / Sublimation Temperature	2700 ℃
抗弯强度 / Flexural Simba	415 MPa RT 4-poindi
杨氏模量 / Young's Modulus	430 Gpa 4pt bend, 1300 ℃
导热系数 / ThermalConductivity	300Wm^-1·K^-1
热膨胀系数 / Kuwedzera Kupisa (CTE)	4.5 × 10^-6K^-1