SiC coated suscetpor o se vaega autu o loʻo faʻaaogaina i faʻagasologa o gaosiga semiconductor. Matou te faʻaaogaina a matou tekonolosi pateni e fai ai le SiC coated suscetpor ma le maualuga maualuga o le mama, lelei faʻapipiʻi tutusa ma se olaga sili ona lelei, faʻapea foʻi ma le maualuga o vailaʻau faʻamaʻi ma mea faʻamautu vevela.
Vaega oa tatou oloa:
1. maualuga le vevela oxidation tetee atu i le 1700 ℃.
2. maualuga mama ma vevela tutusa
3. Lelei le fa'afefeteina: acid, alkali, masima ma meaola fa'aola.
4. Maaa maualuga, faʻapipiʻi luga, vaega laiti.
5. Le soifua tautua umi ma sili atu le umi
| CVD SiC薄膜基本物理性能 Meatino fa'aletino autu o le CVD SiCufiufi | |
| 性质 / Meatotino | 典型数值 / Taua masani |
| 晶体结构 / Fa'a tioata | FCC β vaega多晶，主要为（111）取向 |
| 密度 / Malosi | 3.21 g/cm³ |
| 硬度 / Maaa | 2500 维氏硬度（500g uta） |
| 晶粒大小 / Saito Tele | 2~10μm |
| 纯度 / Vailaau Mama | 99.99995% |
| 热容 / Malosiaga vevela | 640 J·kg-1·K-1 |
| 升华温度 / Sulimation Temperature | 2700 ℃ |
| 抗弯强度 / Malosi Fa'alilolilo | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt pi'o, 1300 ℃ |
| 导热系数 / ThermalConductivity | 300W·m-1·K-1 |
| 热膨胀系数 / Fa'alauteleina o le vevela(CTE) | 4.5×10-6K-1 |
Faʻafeiloaʻi faʻafeiloaʻi oe e asiasi i la matou falegaosimea, seʻi o tatou faia nisi talanoaga!
