Ole laina ole oloa ole VET Energy e le gata ile GaN ile SiC wafers. Matou te tuʻuina atu foʻi le tele o mea faʻapipiʻi semiconductor substrate, e aofia ai le Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, ma isi. Wafer, e faʻafetaui ai le manaʻoga eletise eletise i le lumanaʻi mo masini faʻatinoina maualuga.
O le VET Energy e tu'uina atu auaunaga fa'apitoa e fetu'una'i, ma e mafai ona fa'avasega GaN epitaxial layers o mafiafia eseese, ituaiga o doping, ma lapopo'a eseese e tusa ai ma mana'oga patino o tagata fa'atau. E le gata i lea, matou te tuʻuina atu foʻi le lagolago faʻapitoa faʻapolofesa ma le maeʻa o le faʻatau atu auaunaga e fesoasoani ai i tagata faʻatau e vave ona atiaʻe masini eletise eletise maualuga.
FAAMATALAGA WAFERING
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Aufana(GF3YFCD)-Taua atoatoa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
A'ai(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Fa'ata'oto |
FA'AI'U LELEI
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
Fa'ai'uga | Itulua Optical Polish, Si- Face CMP | ||||
Lau'ele'ele | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Tipi Chips | Leai se Fa'ataga (umi ma le lautele≥0.5mm) | ||||
Indents | Leai se Fa'ataga | ||||
Manu'ese(Si-Fua'i) | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | ||
Ta'eta'ei | Leai se Fa'ataga | ||||
Tuusaunoaga Tupito | 3mm |