O le Monocrystalline 8 Inch Silicon Wafer mai le VET Energy o se fa'afofoga fa'apitoa mo le semiconductor ma masini fa'aeletoroni. O le ofoina atu o le mama sili atu ma le fausaga tioata, o nei wafers e sili ona lelei mo talosaga maualuga i totonu uma o le photovoltaic ma semiconductor alamanuia. O le VET Energy e fa'amautinoaina o lo'o fa'agaoioia ma'oti uma fa'ato'aga e fa'amalieina tulaga maualuga, e maua ai le tutusa lelei ma le fa'au'uga lamolemole, e mana'omia mo le gaosiga o masini fa'aeletoroni.
O nei Monocrystalline 8 Inch Silicon Wafers e fetaui lelei ma le tele o mea, e aofia ai Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, ma e fetaui lelei mo le tuputupu aʻe o le Epi Wafer. O le maualuga o le faʻauluina o le vevela ma mea tau eletise e avea ai i latou ma filifiliga faʻalagolago mo le gaosiga maualuga. E le gata i lea, o nei wafers ua mamanuina e galulue faʻatasi ma mea e pei o le Gallium Oxide Ga2O3 ma le AlN Wafer, e ofoina atu le tele o talosaga mai le eletise eletise i masini RF. E fetaui lelei fo'i ma fa'apipi'i i totonu o faiga Kaseti mo si'osi'omaga o le gaosiga otometi.
Ole laina ole oloa ole VET Energy e le fa'atapula'aina ile u'u masi fa'a'oloa. Matou te tuʻuina atu foʻi le tele o mea faʻapipiʻi semiconductor substrate, e aofia ai le SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, ma isi, faʻapea foʻi ma mea fou faʻapipiʻi semiconductor e pei o Gallium Oxide Ga2O3 ma AlN Wafer. O nei oloa e mafai ona faʻamalieina manaʻoga o tagata faʻatau eseese ile eletise eletise, leitio, masini ma isi matāʻupu.
O le VET Energy e tu'uina atu i tagata fa'atau a latou fa'afofoga fa'apitoa. E mafai ona tatou customize wafers ma eseese resistivity, mea okesene, mafiafia, ma isi e tusa ai ma manaoga faapitoa o tagata faatau. E le gata i lea, matou te tuʻuina atu foʻi le lagolago faʻapitoa faʻapolofesa ma le maeʻa ona faʻatau atu auaunaga e fesoasoani ai i tagata faʻatau e foia faʻafitauli eseese e feagai i le faagasologa o le gaosiga.
FAAMATALAGA WAFERING
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
TTV(GBIR) | ≤6um | ≤6um | |||
Aufana(GF3YFCD)-Taua atoatoa | ≤15μm | ≤15μm | ≤25μm | ≤15μm | |
A'ai(GF3YFER) | ≤25μm | ≤25μm | ≤40μm | ≤25μm | |
LTV(SBIR)-10mmx10mm | <2μm | ||||
Wafer Edge | Fa'ata'oto |
FA'AI'U LELEI
*n-Pm=n-ituaiga Pm-Vaega,n-Ps=n-ituaiga Ps-Vaega,Sl=Semi-lnsulating
Aitema | 8-Inisi | 6-Inisi | 4-Inisi | ||
nP | n-Pm | n-Sa | SI | SI | |
Fa'ai'uga | Itulua Optical Polish, Si- Face CMP | ||||
Lau'ele'ele | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Tipi Chips | Leai se Fa'ataga (umi ma le lautele≥0.5mm) | ||||
Indents | Leai se Fa'ataga | ||||
Manu'ese(Si-Fua'i) | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | Qty.≤5, Fa'aopoopo | ||
Ta'eta'ei | Leai se Fa'ataga | ||||
Tuusaunoaga Tupito | 3mm |