SiC isize suscetpor nikintu cyingenzi gikoreshwa muburyo butandukanye bwo gukora semiconductor. Twifashishije tekinoroji yacu yemewe kugirango dukore suscetpor ya SiC ifite isuku irenze urugero, uburinganire bwiza hamwe nubuzima bwiza bwa serivisi, hamwe n’imiti myinshi irwanya imiti hamwe nubushyuhe bwumuriro.
Ibiranga ibicuruzwa byacu:
1. Ubushyuhe bwo hejuru bwa okiside irwanya 1700 ℃.
2. Isuku ryinshi nuburinganire bwumuriro
3. Kurwanya ruswa nziza cyane: aside, alkali, umunyu na reagent.
4. Gukomera cyane, hejuru yuzuye, ibice byiza.
5. Kuramba kumurimo muremure kandi biramba
| CVD SiC薄膜基本物理性能 Ibyingenzi bifatika bya CVD SiCgutwikira | |
| 性质 / Umutungo | 典型数值 / Agaciro gasanzwe |
| 晶体结构 / Imiterere ya Crystal | FCC β icyiciro多晶，主要为（111 ）取向 |
| 密度 Ubucucike | 3.21 g / cm³ |
| 硬度 / Gukomera | 2500 维氏硬度（ 500g umutwaro） |
| 晶粒大小 / Ibinyampeke SiZe | 2 ~ 10 mm |
| 纯度 / Ubuziranenge bwa Shimi | 99.99995% |
| 热容 / Ubushyuhe | 640 J · kg-1· K.-1 |
| 升华温度 / Ubushyuhe bwo hejuru | 2700 ℃ |
| 抗弯强度 / Imbaraga zoroshye | 415 MPa RT amanota 4 |
| 杨氏模量 / Modulus | 430 Gpa 4pt yunamye, 1300 ℃ |
| 导热系数 / ThermalImyitwarire | 300W · m-1· K.-1 |
| 热膨胀系数 Kwagura Ubushyuhe (CTE) | 4.5 × 10-6K-1 |
Murakaza neza cyane gusura uruganda rwacu, reka tuganire kubindi biganiro!
