SiC Coated Graphite Abatwara ， sic coating, SiC coating ya Graphite substrate ya Semiconductor

Carbide ya silicondisiki ya grafite ni ugutegura silicon karbide irinda hejuru ya grafite ukoresheje imyuka yumubiri cyangwa imiti hamwe no gutera. Icyuma cyateguwe na silicon karbide irinda irashobora guhuzwa neza na matrike ya grafite, bigatuma ubuso bwibanze bwa grafite bwuzura kandi butarimo ubusa, bigatanga imiterere yihariye ya grafite, harimo kurwanya okiside, aside irwanya alkali, kurwanya isuri, kurwanya ruswa, Ibindi.

Silicon carbide semiconductor nicyo kintu cyibanze cyibintu bishya byatejwe imbere bigari bya semiconductor. Ibikoresho byayo bifite ibiranga ubushyuhe bwo hejuru, birwanya imbaraga nyinshi, imbaraga nyinshi, imbaraga nyinshi hamwe n’imishwarara. Ifite ibyiza byo kwihuta byihuse no gukora neza. Irashobora kugabanya cyane gukoresha ingufu zibicuruzwa, kunoza imikorere ihindura ingufu no kugabanya ibicuruzwa. Ikoreshwa cyane cyane mu itumanaho rya 5g, ingabo z’igihugu ndetse n’inganda za gisirikare Umwanya wa RF uhagarariwe n’ikirere hamwe n’umuriro wa elegitoroniki w’amashanyarazi uhagarariwe n’imodoka nshya n’ingufu n’ibikorwa remezo bishya bifite isoko ryumvikana kandi rinini ku masoko haba mu gisivili ndetse no mu gisirikare.

Silicon carbide substrate nibikoresho byibanze bishya bigizwe na bande ya semiconductor. Silicon carbide substrate ikoreshwa cyane cyane muri microwave electronics, electronics power nizindi nzego. Ni kumpera yimbere yumurongo mugari wa semiconductor yinganda zinganda kandi niwo wambere kandi wibanze byingenzi byingenzi.Silicon karbide substrate irashobora kugabanywamo ubwoko bubiri: insulasiyo ya seminike kandi ikora. Muri byo, insimburangingo ya silicon karbide substrate ifite imbaraga zo kurwanya (kurwanya ≥ 105 Ω · cm). Semi insulation substrate ihujwe na heterogeneous gallium nitride epitaxial urupapuro rushobora gukoreshwa nkibikoresho byibikoresho bya RF, bikoreshwa cyane cyane mu itumanaho rya 5g, kurinda igihugu ndetse n’inganda za gisirikare mu bice byavuzwe haruguru; Ibindi ni silicon karbide substrate hamwe nuburwanya buke (intera irwanya ni 15 ~ 30m Ω · cm). Epitaxy ya homogeneous epicxy ya silicon karbide substrate na silicon karbide irashobora gukoreshwa nkibikoresho byibikoresho byamashanyarazi. Ibyingenzi byingenzi bikoreshwa ni ibinyabiziga byamashanyarazi, sisitemu yingufu nizindi nzego