Carbide ya Silicon (SiC) nigikoresho gishya cya semiconductor. Carbide ya Silicon ifite icyuho kinini (hafi inshuro 3 silikoni), imbaraga zikomeye zumurima (hafi inshuro 10 silicon), ubushyuhe bwinshi bwumuriro (hafi inshuro 3 silikoni). Nibintu byingenzi bizakurikiraho-igice cya semiconductor ibikoresho. Ibikoresho bya SiC bikoreshwa cyane mu nganda ziciriritse hamwe n’ifoto yizuba. By'umwihariko, suseptors ikoreshwa mugukura kwa epitaxial ya LED na Si imwe ya kirisiti ya kirisiti isaba gukoresha igifuniko cya SiC. Bitewe no kuzamuka kwinshi kwa LED mu kumurika no kwerekana inganda, hamwe niterambere rikomeye ryinganda ziciriritse,Igicuruzwa cya SiCibyiringiro nibyiza cyane.
GUSHYIRA MU BIKORWA
Isuku, SEM Imiterere, isesengura ryubunini bwaSiC
Ubuziranenge bwibikoresho bya SiC kuri grafite ukoresheje CVD bingana na 99,9995%. Imiterere yacyo ni fcc. Filime za SiC zishushanyije kuri grafite ni (111) yerekanwe nkuko bigaragara mu makuru ya XRD (Igishusho.1) yerekana ubwiza bwayo bwa kristu. Ubunini bwa firime ya SiC burasa cyane nkuko bigaragara ku gishushanyo cya 2.
Igishushanyo cya 2: imyenda yubugari bwa firime ya SiC SEM na XRD ya beta - SiC film kuri grafite
SEM amakuru ya CVD SiC yoroheje, ubunini bwa kristu ni 2 ~ 1 Opm
Imiterere ya kristu ya firime ya CVD SiC ni isura ya cubic yubatswe, kandi icyerekezo cyo gukura kwa firime kiri hafi 100%
Carbide ya Silicon (SiC) yatwikiriweshingiro niryo shingiro ryiza rya kirisiti imwe ya kirisiti na GaN epitaxy, nicyo kintu cyibanze kigize itanura rya epitaxy. Shingiro nigikoresho cyingenzi cyibikoresho bya silicon ya monocrystalline kumirongo minini ihuriweho. Ifite isuku nyinshi, irwanya ubushyuhe bwinshi, irwanya ruswa, ubukana bwiza bwikirere nibindi bintu byiza biranga ibintu.
Gusaba ibicuruzwa no gukoresha
Igishushanyo mbonera cya graphite yo gukura kwa kristu imwe ya silicon epitaxial Ikwiranye nimashini za Aixtron, nibindi .Gutwika uburebure: 90 ~ 150umUmurambararo wa wafer ni 55mm.
Igihe cyo kohereza: Werurwe-14-2022