Abacuruzi beza benshi Ubushinwa Abrasive Polishing na Sandblasting Silicon Carbide Nano Sic hamwe nubushuhe bwiza.

Ibisobanuro bigufi:


  • Aho byaturutse:Ubushinwa
  • Imiterere ya Crystal:Icyiciro cya FCCβ
  • Ubucucike:3.21 g / cm;
  • Gukomera:2500 Vickers;
  • Ingano y'ibinyampeke:2 ~ 10 mm;
  • Ubuziranenge bwa Shimi:99,99995%;
  • Ubushobozi bwo gushyushya:640J · kg-1 · K-1;
  • Ubushyuhe bwa Sublimation:2700 ℃;
  • Imbaraga zidasanzwe:415 Mpa (RT 4-Ingingo);
  • Umusore Modulus:430 Gpa (4pt yunamye, 1300 ℃);
  • Kwagura Ubushyuhe (CTE):4.5 10-6K-1;
  • Amashanyarazi:300 (W / MK);
  • Ibicuruzwa birambuye

    Ibicuruzwa

    Hamwe nubuyobozi bukomeye, ubushobozi bwa tekiniki bukomeye hamwe nuburyo bukomeye bwo gufata neza, dukomeje guha abakiriya bacu ubuziranenge bwo hejuru, ibiciro byo kugurisha neza hamwe nababitanga bakomeye. Dufite intego yo kuba mubafatanyabikorwa bawe bizewe kandi tukanyurwa kubacuruzi beza benshi Ubushinwa Abrasive Polishing na Sandblasting Silicon Carbide NanoSichamwe nubushuhe bwiza bwa Thermal, Intego yacu yibanze ni uguhora dushyira kumurongo wambere kandi tunayobora nkumupayiniya murwego rwacu. Twizeye neza ko uburambe butanga umusaruro mugukora ibikoresho bizabona ikizere cyabakiriya, Twifurije gufatanya no gufatanya gukora igihe kirekire cyiza hamwe nawe!
    Hamwe nubuyobozi bukomeye, ubushobozi bwa tekiniki bukomeye hamwe nuburyo bukomeye bwo gufata neza, dukomeje guha abakiriya bacu ubuziranenge bwo hejuru, ibiciro byo kugurisha neza hamwe nababitanga bakomeye. Dufite intego yo kuba mubafatanyabikorwa bawe bizewe kandi tukanyurwaUbushinwa Silicon Carbide, Sic, Intego yacu ni "gutanga ibicuruzwa byambere byintambwe nibisubizo hamwe na serivise nziza kubakiriya bacu, bityo tuzi neza ko ugomba kugira inyungu zinyuranye binyuze mubufatanye natwe". Niba ushishikajwe nibicuruzwa byacu cyangwa ukaba wifuza kuganira kubicuruzwa byabigenewe, nyamuneka twandikire. Dutegereje gushiraho umubano mwiza mubucuruzi hamwe nabakiriya bashya kwisi yose mugihe cya vuba.
    Ibisobanuro ku bicuruzwa

    Isosiyete yacu itanga serivise zo gutunganya SiC hakoreshejwe uburyo bwa CVD hejuru ya grafite, ceramique nibindi bikoresho, kugirango imyuka idasanzwe irimo karubone na silikoni ikora ubushyuhe bwinshi kugirango ibone molekile nziza ya SiC, molekile zashyizwe hejuru yibikoresho bisize, gukora urwego rwo kurinda SIC.

    Ibyingenzi byingenzi:

    1. Kurwanya ubushyuhe bukabije bwa okiside:

    kurwanya okiside biracyari byiza cyane mugihe ubushyuhe buri hejuru ya 1600 C.

    2. Isuku ryinshi: bikozwe nubumara bwa chimique munsi yubushyuhe bwo hejuru bwa chlorine.

    3. Kurwanya isuri: gukomera kwinshi, hejuru yuzuye, ibice byiza.

    4. Kurwanya ruswa: aside, alkali, umunyu na reagent.

    Ibyingenzi byingenzi bya CVD-SIC

    Ibiranga SiC-CVD

    Imiterere ya Crystal FCC β icyiciro
    Ubucucike g / cm ³ 3.21
    Gukomera Vickers gukomera 2500
    Ingano y'ibinyampeke μm 2 ~ 10
    Ubuziranenge bwa Shimi % 99.99995
    Ubushyuhe J · kg-1 · K-1 640
    Ubushyuhe bwo hejuru 2700
    Imbaraga zidasanzwe MPa (RT-amanota 4) 415
    Umusore Modulus Gpa (4pt yunamye, 1300 ℃) 430
    Kwagura Ubushyuhe (CTE) 10-6K-1 4.5
    Amashanyarazi (W / mK) 300

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