ʻO GaN Epitaxy ma muli o ka Silicon

ʻO ka wehewehe pōkole:


  • Kahi i kumu:Kina
  • Hoʻokumu Crystal:FCCβphase
  • ʻO ka mānoanoa:3.21 g/cm
  • ʻoʻoleʻa:2500 Vickers
  • Ka nui o ka palaoa:2~10μm
  • Maʻemaʻe Kemika:99.99995%
  • Kaha wela:640J·kg-1·K-1
  • Mahana Sublimation:2700 ℃
  • Ikaika Felexural:415 Mpa (RT 4-Point)
  • 'Ōpio's Modulus:430 Gpa (4pt piko, 1300 ℃)
  • Hoʻonui wela (CTE):4.5 10-6K-1
  • ʻO ke kau wela wela:300 (W/mK)
  • Huahana Huahana

    Huahana Huahana

    Hōʻike huahana

    Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

    Nā hiʻohiʻona nui:

    1. Kiʻekiʻe wela oxidation kū'ē:

    ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

    2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

    3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

    4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

    Nā kiko'ī nui o ka CVD-SIC Coating

    Nā Waiwai SiC-CVD

    Hoʻokumu Crystal Māhele FCC β
    ʻO ka mānoanoa g/cm ³ 3.21
    ʻoʻoleʻa ʻO ka paʻakikī o Vickers 2500
    Ka nui o ka palaoa μm 2~10
    Maemae Kemika % 99.99995
    Kaha Wela J·kg-1 ·K-1 640
    Mahana Sublimation 2700
    Ikaika Felexural MPa (RT 4-point) 415
    ʻO Young's Modulus Gpa (4pt piko, 1300 ℃) 430
    Hoʻonui wela (CTE) 10-6K-1 4.5
    ʻO ke kau wela wela (W/mK) 300

     

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