IC Hoʻokahi-Crystal Silicon Epitaxy

Kiʻi Hōʻike ʻia ʻo IC Single-Crystal Silicon Epitaxy

ʻO ka wehewehe pōkole:

Kahi i kumu:Kina

Hoʻokumu Crystal:Māhele FCCβ

ʻO ka mānoanoa:3.21 g/cm;

ʻoʻoleʻa:2500 Vickers;

Ka nui o ka palaoa:2~10μm;

Maʻemaʻe Kemika:99.99995%;

Kaha wela:640J·kg-1·K-1;

Mahana Sublimation:2700 ℃;

Ikaika Felexural:415 Mpa (RT 4-Point);

'Ōpio Modulus :430 Gpa (4pt piko, 1300 ℃);

Hoʻonui Thermal (CTE):4.5 10-6K-1;

ʻO ka wela wela:300（W/MK）;

E hoʻouna i ka leka uila iā mākou Hoʻoiho ma ke ʻano he PDF

Huahana Huahana

Hōʻike huahana

Hāʻawi kā mākou hui i nā lawelawe kaʻina hana hoʻoheheʻe SiC ma ke ʻano CVD ma ka ʻili o ka graphite, ceramics a me nā mea ʻē aʻe, i hiki ai i nā kinoea kūikawā i loaʻa ke kalapona a me ke silika i ke kiʻekiʻe kiʻekiʻe e loaʻa ai nā molekala SiC maʻemaʻe kiʻekiʻe. e hana ana i ka papa pale SIC.

Nā hiʻohiʻona nui:

1. Kiʻekiʻe wela oxidation kū'ē:

ʻoi aku ka maikaʻi o ka pale ʻana i ka oxidation ke kiʻekiʻe ka mahana e like me 1600 C.

2. Maʻemaʻe kiʻekiʻe: hana ʻia e ka hoʻoheheʻe ʻana i ka mahu ma lalo o ke kūlana chlorination kiʻekiʻe.

3. Erosion kū'ē: kiʻekiʻe paakiki, paʻaʻiliʻili, maikaʻi particles.

4. Ke kū'ē i ka corrosion: acid, alkali, paʻakai a me nā mea hoʻoulu.

Nā kiko'ī nui o ka CVD-SIC Coating

Nā Waiwai SiC-CVD
Hoʻokumu Crystal	Māhele FCC β
ʻO ka mānoanoa	g/cm ³	3.21
ʻoʻoleʻa	ʻO ka paʻakikī Vickers	2500
Ka nui o ka palaoa	μm	2~10
Maemae Kemika	%	99.99995
Kaha Wela	J·kg-1 ·K-1	640
Mahana Sublimation	℃	2700
Ikaika Felexural	MPa (RT 4-point)	415
ʻO Young's Modulus	Gpa (4pt piko, 1300 ℃)	430
Hoʻonui wela (CTE)	10-6K-1	4.5
ʻO ke kau wela wela	(W/mK)	300