Nā hiʻohiʻona:
· ʻOi loa ka Thermal Shock Resistance
· Kūleʻa haʻalulu kino maikaʻi
· Kūʻē Kemika maikaʻi loa
· Maʻemaʻe Kiʻekiʻe
· Loaʻa ma ke ʻano paʻakikī
· Hoʻohana ʻia ma lalo o ka Oxidizing Atmosphere
Noi:
Nā hiʻohiʻona a me nā pono o ka huahana:
1. ʻOi aku ka pale wela wela:Me kahi maʻemaʻe kiʻekiʻeKa uhi ʻana o SiC, kū'ē ka substrate i nā mahana wela, e hōʻoia i ka hana mau i nā wahi koi e like me ka epitaxy a me ka hana semiconductor.
2. Hoʻonui i ka lōʻihi:Hoʻolālā ʻia nā ʻāpana graphite i uhi ʻia ʻo SiC e pale aku i ka ʻino a me ka oxidation, e hoʻonui ana i ke ola o ka substrate i hoʻohālikelike ʻia me nā substrate graphite maʻamau.
3. ʻO ka Graphite i uhi ʻia me ka Vitreous:ʻO ke ʻano vitreous kū hoʻokahi o kaKa uhi ʻana o SiChāʻawi i ka paʻakikī o ka ʻili maikaʻi, e hōʻemi ana i ka ʻaʻahu a me ka waimaka i ka wā o ka hana wela kiʻekiʻe.
4. Kiʻekiʻe Maʻemaʻe SiC Coating:ʻO kā mākou substrate e hōʻoia i ka liʻiliʻi o ka haumia i nā kaʻina semiconductor koʻikoʻi, e hāʻawi ana i ka hilinaʻi no nā ʻoihana e koi ana i ka maʻemaʻe maʻemaʻe.
5. Noi makeke akea:ʻO kaSusceptor graphite i uhi ʻia ʻo SiCKe hoʻomau nei ka mākeke i ka piʻi ʻana o ka noi no nā huahana SiC coated kiʻekiʻe i ka hana semiconductor, hoʻonoho i kēia substrate ma ke ʻano he mea pāʻani nui ma ka mākeke wafer graphite a me ka mākeke graphite trays silicon carbide coated.
Nā ʻano maʻamau o ka Material Graphite Base:
| ʻIke ʻia ka mānoanoa: | 1.85 g/cm3 |
| Ke kū'ē uila: | 11 μΩm |
| ʻO ke koʻikoʻi ʻoluʻolu: | 49 MPa (500kgf/cm2) |
| Paʻa Paʻa: | 58 |
| lehu: | <5ppm |
| ʻO ka wela wela: | 116 W/mK (100 kcal/mhr- ℃) |
| CVD SiC薄膜基本物理性能 Nā waiwai kino kumu o CVD SiCka uhi ʻana | |
| 性质 / Waiwai | 典型数值 / Waiwai maʻamau |
| 晶体结构 / Kahua Crystal | FCC β phase 多晶，主要为（111）取向 |
| 密度 / Density | 3.21 g/cm³ |
| 硬度 / Paʻakiki | 2500 维氏硬度（500g load） |
| 晶粒大小 / Grain SiZe | 2~10μm |
| 纯度 / Maʻemaʻe Kemika | 99.99995% |
| 热容 / Kaha Wela | 640 J·kg-1·K-1 |
| 升华温度 / Kaumaha Sublimation | 2700 ℃ |
| 抗弯强度 / Ikaika Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Young's Modulus | 430 Gpa 4pt piko, 1300 ℃ |
| 导热系数 / Hoʻokaʻawale wela | 300W·m-1·K-1 |
| 热膨胀系数 / Hoʻonui Thermal(CTE) | 4.5×10-6K-1 |
ʻO VET Energy ka mea hana maoli i nā huahana graphite a me nā silicon carbide me nā ʻāpana like ʻole e like me ka uhi SiC, ka uhi TaC, ka uhi kalapona aniani, ka uhi kalapona pyrolytic, a me nā mea ʻē aʻe, hiki ke hāʻawi i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic.
Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.
Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.
Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!
