Paʻa Pepa Epitaxial Silicon Carbide No ka Puhi Epitaxial Semiconductor

ʻO ka wehewehe pōkole:

ʻO VET Energy Silicon Carbide Epitaxial Sheet Tray kahi huahana hana kiʻekiʻe i hoʻolālā ʻia e hāʻawi i ka hana kūpaʻa a hilinaʻi hoʻi i kahi manawa lōʻihi. Loaʻa iā ia ke kūpaʻa wela maikaʻi loa a me ka like ʻana o ka wela, ka maʻemaʻe kiʻekiʻe, ka pale ʻana i ka erosion, e hana ana i ka hopena kūpono no nā noi hana wafer.


Huahana Huahana

Huahana Huahana

SiC-inductors1
SiC-inductors2

ʻO ka silikon carbide sheet tray kahi mea nui i hoʻohana ʻia i nā kaʻina hana semiconductor. Hoʻohana mākou i kā mākou ʻenehana patent no ka hana ʻana i ka pahu silicon carbide sheet me ka maʻemaʻe kiʻekiʻe loa, ka like ʻana o ka uhi maikaʻi a me ke ola lawelawe maikaʻi loa, a me ke kūpaʻa kemika kiʻekiʻe a me nā waiwai paʻa wela.

ʻO VET Energy ka mea hana maoli o nā huahana graphite a me ka silicon carbide me nā ʻāpana like ʻole e like me SiC, Tac, carbon pyrolytic, carbon glassy, ​​etc., hiki ke hāʻawi i nā ʻāpana like ʻole no ka semiconductor a me ka ʻoihana photovoltaic. Hele mai kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki iā ia ke hāʻawi i nā hoʻonā ʻoihana ʻoihana hou aku no ʻoe.

Hoʻomohala mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua, a ua hana mākou i kahi ʻenehana patented kūʻokoʻa, hiki ke hoʻoikaika i ka paʻa ʻana ma waena o ka uhi a me ka substrate a ʻoi aku ka liʻiliʻi o ka wehe.

Nā hiʻohiʻona o kā mākou huahana:

1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700 ℃.
2. ʻO ka hoʻomaʻemaʻe kiʻekiʻe a me ke kūlike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.

4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi

CVD SiC薄膜基本物理性能

Nā waiwai kino kumu o CVD SiCka uhi ʻana

性质 / Waiwai

典型数值 / Waiwai maʻamau

晶体结构 / Hoʻomoe Crystal

Māhele FCC β多晶,主要为(111)取向

密度 / Paʻa

3.21 g/cm³

硬度 / Oolea

2500 维氏硬度(500g load)

晶粒大小 / ʻAiʻa palaoa

2~10μm

纯度 / Maemae Kemika

99.99995%

热容 / Hikina Wela

640 J·kg-1·K-1

升华温度 / Kaumaha Sublimation

2700 ℃

抗弯强度 / Ka Ikaika Pilikia

415 MPa RT 4-point

杨氏模量 / 'Ōpio's Modulus

430 Gpa 4pt piko, 1300 ℃

导热系数 / ThermalʻO ka hoʻokō

300W·m-1·K-1

热膨胀系数 / Hoʻonui wela (CTE)

4.5×10-6K-1

1

2

Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!

研发团队

 

生产设备

 

公司客户

 


  • Mua:
  • Aʻe:

  • WhatsApp kamaʻilio pūnaewele!