ʻO ka waʻa wafer Silicon carbide he mea lawe ukana no nā wafers, i hoʻohana nui ʻia i nā kaʻina diffusion solar a me semiconductor. Loaʻa iā ia nā hiʻohiʻona e like me ke kūpaʻa ʻana, ka pale ʻana i ka corrosion, ka hopena hopena kiʻekiʻe, ke kūʻē ʻana i ka bombardment plasma, ke kiʻekiʻe o ka wela wela, ka wela wela kiʻekiʻe, ka wela wela kiʻekiʻe, a me ka hoʻohana lōʻihi ʻaʻole maʻalahi ke kulou a me ka deform. Ke hoʻohana nei kā mākou hui i nā mea carbide silicon maʻemaʻe kiʻekiʻe e hōʻoia i ke ola o ka lawelawe a hāʻawi i nā hoʻolālā maʻamau, me nā ʻano waʻa wafer vertical a me ke ākea.
Pepa ʻIke Mea
| 材料Mea waiwai | R-SiC |
| 使用温度Mahana hana (°C) | 1600°C ( 氧化气氛 Kaiapuni oxidizing)1700°C ( 还原气氛 Kaiapuni hoemi) |
| SiC含量SiC maʻiʻo (%) | > 99 |
| 自由ʻO 含量 ʻAʻohe maʻiʻo Si (%) | < 0.1 |
| 体积密度ʻAno nui (g/cm3) | 2.60-2.70 |
| 气孔率ʻIke ʻia ka porosity (%) | < 16 |
| 抗压强度Ka ikaika ʻohi (MPa) | > 600 |
| 常温抗弯强度Ka ikaika kulou anu (MPa) | 80-90 (20°C) |
| 高温抗弯强度Ka ikaika piko wela (MPa) | 90-100 (1400°C) |
| 热膨胀系数Ka helu hoʻonui wela @1500°C (10-6/°C) | 4.70 |
| 导热系数Hiki ke hoʻokahe wela @1200°C (W/m•K) | 23 |
| 杨氏模量Modulus elastic (GPa) | 240 |
| 抗热震性Ke kū'ē i ka ha'alulu wela | 很好Maikaʻi loa |
Ningbo VET Energy Technology Co., Ltdhe ʻoihana ʻenehana kiʻekiʻe e kālele ana i ka hana ʻana a me ke kūʻai ʻana i nā mea kiʻekiʻe kiʻekiʻe, nā mea a me nā ʻenehanakomographite, silika carbide, seramika, lapaʻau ʻili a pēlā aku. Hoʻohana nui ʻia nā huahana i ka photovoltaic, semiconductor, ikehu hou, metallurgy, etc.
ʻO kā mākou hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana hou akunāu.
Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!
