ʻO nā ʻāpana hapa ʻelua - SiC epitaxial ʻāpana lako

ʻO ka wehewehe pōkole:

Hoʻomaka a hoʻohana ʻia ka huahana: Hoʻohui ʻia ka pahu quartz, hiki ke hoʻokuʻu i ke kinoea e hoʻokele i ka rotation base tray, ka mālama ʻana i ka mahana

Kahi o ka mea hana o ka huahana: i loko o ke keʻena pane, ʻaʻole pili pono me ka wafer

ʻO nā huahana o lalo: nā mana mana

Makeke kahua nui: nā kaʻa ikehu hou


Huahana Huahana

Huahana Huahana

SZDFGZDFC
sADfSDfc
FDVSDCVXCV
sADfSDfc

Mahele Halfmoon SiC Coated Graphiteis a ʻāpana i hoʻohana ʻia i nā kaʻina hana semiconductor, ʻoi aku hoʻi no nā lako epitaxial SiC.Hoʻohana mākou i kā mākou ʻenehana patent e hana i ka hapa hapalua mahina meka maemae loa,maikaʻi loaka uhi ʻanalokahia me kahi ola lawelawe maikaʻi loa, a ʻo kekahikiʻekiʻe kemika kū'ē a me ka wela paʻa waiwai.

ʻO VET Energy ka kamea hana maoli o ka graphite maʻamau a me nā huahana silicon carbide me ka uhi CVD,hiki ke hoolakoʻokoʻanā ʻāpana i hana ʻia no ka semiconductor a me ka ʻoihana photovoltaic. OʻO kāu hui ʻenehana mai nā keʻena noiʻi kūloko kiʻekiʻe, hiki ke hāʻawi i nā ʻoihana ʻoihana ʻoi aku ka nuināu.

Hoʻomau mau mākou i nā kaʻina hana kiʻekiʻe e hāʻawi i nā mea ʻoi aku ka holomua,aUa hana ʻo ia i kahi ʻenehana patented kūʻokoʻa, hiki iā ia ke hana i ka hoʻopaʻa ʻana ma waena o ka uhi a me ka substrate i ʻoi aku ka paʻa a emi ʻole i ka wehe.

Fnā ʻano o kā mākou huahana:

1. Kiʻekiʻe wela oxidation kū'ē a hiki i 1700.
2. Maʻemaʻe kiʻekiʻe ahoʻolikelike wela
3. ʻOi aku ka maikaʻi o ka corrosion resistance: acid, alkali, paʻakai a me nā mea hoʻohui.
4. ʻO ka paʻakikī kiʻekiʻe, ka ʻili paʻa, nā ʻāpana maikaʻi.
5. ʻOi aku ka lōʻihi o ke ola a ʻoi aku ka lōʻihi

CVD SiC薄膜基本物理性能

Nā waiwai kino kumu o CVD SiCka uhi ʻana

性质 / Waiwai

典型数值 / Waiwai maʻamau

晶体结构 / Hoʻomoe Crystal

Māhele FCC β多晶,主要为(111)取向

密度 / Paʻa

3.21 g/cm³

硬度 / Oolea

2500 维氏硬度(500g load)

晶粒大小 / ʻAiʻa palaoa

2~10μm

纯度 / Maemae Kemika

99.99995%

热容 / Hikina Wela

640 J·kg-1·K-1

升华温度 / Kaumaha Sublimation

2700 ℃

抗弯强度 / Ka Ikaika Pilikia

415 MPa RT 4-point

杨氏模量 / 'Ōpio's Modulus

430 Gpa 4pt piko, 1300 ℃

导热系数 / ThermalʻO ka hoʻokō

300W·m-1·K-1

热膨胀系数 / Hoʻonui wela (CTE)

4.5×10-6K-1

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Hoʻokipa maikaʻi iā ʻoe e kipa i kā mākou hale hana, e kūkākūkā hou kāua!

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