vet-china yana gabatar da sabuwar fasahar Vertical Column Wafer Boat & Pedestal, cikakkiyar bayani don sarrafa semiconductor na ci gaba. An ƙera shi da madaidaicin madaidaicin, wannan tsarin sarrafa wafer yana ba da kwanciyar hankali da daidaitawa mara misaltuwa, mai mahimmanci ga yanayin masana'anta mai inganci.
A tsaye ginshiƙi Wafer Boat & Pedestal an gina shi tare da kayan ƙima waɗanda ke ba da garantin kwanciyar hankali da juriya ga lalata sinadarai, yana mai da shi dacewa da mafi ƙarancin hanyoyin ƙirƙira semiconductor. Ƙirar ginshiƙi na musamman na tsaye yana tallafawa wafers amintacce, yana rage haɗarin rashin daidaituwa da yuwuwar lalacewa yayin jigilar kaya da sarrafawa.
Tare da haɗewar vet-china's Vertical Column Wafer Boat & Pedestal, masana'antun semiconductor na iya tsammanin ingantaccen kayan aiki, rage ƙarancin lokaci, da haɓaka yawan amfanin ƙasa. Wannan tsarin ya dace da nau'ikan wafer daban-daban da kuma daidaitawa, yana ba da sassauci da haɓaka don buƙatun samarwa daban-daban.
Yunkurin vet-china don kyakkyawan aiki yana tabbatar da cewa kowane Rukunin Rukunin Tsaye na Wafer Boat & Pedestal ya dace da mafi girman ma'auni na inganci da aiki. Ta hanyar zabar wannan warwarewar-baki, kuna saka hannun jari a cikin hanyar da za ta tabbatar da gaba don sarrafa wafer wanda ke haɓaka inganci da aminci a masana'antar semiconductor.
Abubuwan da aka sake yi na silicon carbide
Silicone carbide Recrystallized (R-SiC) abu ne mai girman gaske tare da taurin na biyu kawai zuwa lu'u-lu'u, wanda aka kafa a babban zafin jiki sama da 2000 ℃. Yana riƙe da kyawawan kaddarorin SiC masu yawa, kamar ƙarfin zafin jiki mai ƙarfi, juriya mai ƙarfi mai ƙarfi, juriya mai kyau na iskar shaka, juriya mai ƙarfi na thermal da sauransu.
● Kyakkyawan kayan aikin injiniya. Silikon carbide da aka sake yin amfani da shi yana da ƙarfin ƙarfi da taurin kai fiye da fiber carbon, juriya mai ƙarfi, yana iya yin aiki mai kyau a cikin matsanancin yanayin zafin jiki, yana iya yin kyakkyawan aiki mai daidaitawa a cikin yanayi daban-daban. Bugu da ƙari, yana da sassauci mai kyau kuma ba ya samun sauƙi ta hanyar mikewa da lankwasawa, wanda ke inganta aikinsa sosai.
● Babban juriya na lalata. Silikon carbide da aka sake yin amfani da shi yana da juriya mai ƙarfi ga kafofin watsa labaru iri-iri, yana iya hana yazawar kafofin watsa labaru iri-iri, yana iya kiyaye kaddarorin injinsa na dogon lokaci, yana da mannewa mai ƙarfi, don ya sami tsawon rayuwar sabis. Bugu da ƙari, yana da kwanciyar hankali mai kyau na thermal, zai iya daidaitawa zuwa wani nau'i na canje-canje na zafin jiki, inganta tasirin aikace-aikacensa.
● Yin zuzzurfan tunani ba ya raguwa. Saboda tsarin sintering ba ya raguwa, babu sauran damuwa da zai haifar da lalacewa ko fashe samfurin, kuma ana iya shirya sassan da ke da sifofi masu rikitarwa da madaidaici.
| 重结晶碳化硅物理特性 Kaddarorin jiki na Silicon Carbide Recrystallized | |
| 性质 / Dukiya | 典型数值 / Yawan Daraja |
| 使用温度/ Yanayin aiki (°C) | 1600°C (tare da oxygen), 1700°C (rage yanayi) |
| SiC含量/ SiC abun ciki | 99.96% |
| 自由Si含量/ Free Si abun ciki | <0.1% |
| 体积密度/Yawan yawa | 2.60-2.70 g/cm3 |
| 气孔率/ Bayyanar porosity | <16% |
| 抗压强度/ Ƙarfin matsawa | > 600MPa |
| 常温抗弯强度/Ƙarfin lanƙwasa sanyi | 80-90 MPa (20°C) |
| 高温抗弯强度Ƙarfin lanƙwasawa mai zafi | 90-100 MPa (1400°C) |
| 热膨胀系数/ Thermal Fadada @1500°C | 4.70 10-6/°C |
| 导热系数/Ƙarfin zafin jiki @1200°C | 23W/m•K |
| 杨氏模量/ Na roba modules | 240 GPA |
| 抗热震性/ thermal girgiza juriya | Madalla da kyau |
Kudin hannun jari VET Energy daainihin manufacturer na musamman graphite da silicon carbide kayayyakin tare da CVD shafi,iya bayarwadaban-dabansassa na musamman don semiconductor da masana'antar hotovoltaic. OƘungiyar fasaha ta ur ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aikina ka.
Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka,kumasun yi aiki da keɓantaccen fasaha mai ƙima, wanda zai iya sa haɗin kai tsakanin sutura da abin da ke ƙasa ya fi ƙarfi kuma ƙasa da ƙasa don cirewa.
| CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi | |
| 性质 / Dukiya | 典型数值 / Yawan Daraja |
| 晶体结构 / Tsarin Crystal | FCC β lokaci多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
| 纯度 / Sinadaran Tsabta | 99.99995% |
| 热容 / Ƙarfin zafi | 640kg-1· K-1 |
| 升华温度 / Sublimation Zazzabi | 2700 ℃ |
| 抗弯强度 / Ƙarfin Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Matasa Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
| 导热系数 / ThermalGudanarwa | 300 w·m-1· K-1 |
| 热膨胀系数 / Fadada thermal (CTE) | 4.5×10-6K-1 |
Barka da zuwa ziyarci masana'antar mu, bari mu kara tattaunawa!
