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  • Menene lahani na silicon carbide epitaxial Layer

    Menene lahani na silicon carbide epitaxial Layer

    Babban fasaha don haɓaka kayan aikin SiC epitaxial shine farkon fasahar sarrafa lahani, musamman don fasahar sarrafa lahani wanda ke da alaƙa da gazawar na'urar ko lalata amincin. Nazarin tsarin lahani na substrate da ke shiga cikin epi ...
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  • Oxidized hatsi a tsaye da fasahar haɓaka epitaxial-Ⅱ

    Oxidized hatsi a tsaye da fasahar haɓaka epitaxial-Ⅱ

    2. Epitaxial bakin ciki fim girma The substrate samar da jiki goyon bayan Layer ko conductive Layer ga Ga2O3 ikon na'urorin. Muhimmin Layer na gaba shine layin tashar tashar ko Layer epitaxial da ake amfani da shi don juriya da jigilar jigilar kaya. Don ƙara fashewar wutar lantarki da rage girman con ...
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  • Gallium oxide crystal guda ɗaya da fasahar haɓaka epitaxial

    Gallium oxide crystal guda ɗaya da fasahar haɓaka epitaxial

    Wide bandgap (WBG) semiconductor wanda silicon carbide (SiC) da gallium nitride (GaN) ke wakilta sun sami kulawa sosai. Mutane suna da babban tsammanin neman aikace-aikacen siliki carbide a cikin motocin lantarki da grid na wutar lantarki, da kuma fatan aikace-aikacen gallium ...
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  • Menene shingen fasaha na siliki carbide?Ⅱ

    Menene shingen fasaha na siliki carbide?Ⅱ

    Matsalolin fasaha a cikin samar da ingantaccen siliki carbide wafers tare da ingantaccen aiki sun haɗa da: 1) Tun da lu'ulu'u suna buƙatar girma a cikin yanayin yanayin zafi mai zafi sama da 2000 ° C, buƙatun kula da zafin jiki suna da girma sosai; 2) Tun da silicon carbide yana da ...
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  • Menene shingen fasaha ga silicon carbide?

    Menene shingen fasaha ga silicon carbide?

    Ƙarni na farko na kayan semiconductor ana wakilta ta silicon (Si) da germanium (Ge), waɗanda sune tushen haɗaɗɗun masana'anta. Ana amfani da su ko'ina a cikin ƙananan ƙarfin lantarki, ƙananan mita, da ƙananan wutar lantarki da masu ganowa. Fiye da kashi 90% na samfuran semiconductor ...
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  • Yaya ake yin SiC micro foda?

    Yaya ake yin SiC micro foda?

    SiC guda crystal abu ne na Rukuni IV-IV fili wanda ya ƙunshi abubuwa biyu, Si da C, a cikin rabon stoichiometric na 1:1. Taurinsa shine na biyu bayan lu'u-lu'u. Ragewar carbon na hanyar siliki oxide don shirya SiC ya dogara ne akan dabarar amsawar sinadarai masu zuwa ...
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  • Ta yaya Layer epitaxial ke taimakawa na'urorin semiconductor?

    Ta yaya Layer epitaxial ke taimakawa na'urorin semiconductor?

    Asalin sunan epitaxial wafer Da farko, bari mu yada ƙaramin ra'ayi: shirye-shiryen wafer ya ƙunshi manyan hanyoyin haɗin gwiwa guda biyu: shirye-shiryen substrate da tsarin epitaxial. Substrate wani wafer ne da aka yi da kayan kristal guda ɗaya. Substrate na iya shiga masana'antar wafer kai tsaye ...
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  • Gabatarwar fasahar tururi na sinadari (CVD) fasahar adana fim na bakin ciki

    Gabatarwar fasahar tururi na sinadari (CVD) fasahar adana fim na bakin ciki

    Chemical Vapor Deposition (CVD) shine muhimmin fasahar jigon fina-finai na bakin ciki, galibi ana amfani dashi don shirya fina-finai masu aiki daban-daban da kayan aikin bakin ciki, kuma ana amfani dashi sosai a masana'antar semiconductor da sauran fannoni. 1. Ƙa'idar aiki na CVD A cikin tsarin CVD, mai ƙaddamar da iskar gas (ɗaya ko ...
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  • Sirrin "black zinariya" a bayan masana'antar semiconductor photovoltaic: sha'awar da dogaro ga graphite isostatic

    Sirrin "black zinariya" a bayan masana'antar semiconductor photovoltaic: sha'awar da dogaro ga graphite isostatic

    Isostatic graphite abu ne mai mahimmanci a cikin photovoltaics da semiconductor. Tare da saurin haɓakar kamfanonin graphite na cikin gida, ikon mallakar kamfanonin ketare a China ya lalace. Tare da ci gaba da bincike mai zaman kansa da ci gaba da ci gaban fasaha, ...
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