Gabatarwa ga Semiconductor GaN na ƙarni na uku da fasahar epitaxial mai alaƙa

1. Semiconductors na ƙarni na uku

An haɓaka fasahar semiconductor na ƙarni na farko bisa ga kayan aikin semiconductor kamar Si da Ge. Ita ce tushen kayan aiki don haɓaka transistor da fasahar kewayawa. Kayayyakin semiconductor na ƙarni na farko sun aza harsashin masana'antar lantarki a cikin ƙarni na 20 kuma su ne ainihin kayan fasahar haɗaɗɗiyar da'ira.

Abubuwan semiconductor na ƙarni na biyu sun haɗa da gallium arsenide, indium phosphide, gallium phosphide, indium arsenide, aluminum arsenide da mahaɗansu na ternary. Abubuwan semiconductor na ƙarni na biyu sune tushen masana'antar bayanai ta optoelectronic. A kan wannan, an haɓaka masana'antu masu alaƙa irin su hasken wuta, nuni, Laser, da photovoltaics. Ana amfani da su ko'ina a cikin fasahar bayanai na zamani da masana'antar nunin optoelectronic.

Abubuwan wakilci na kayan semiconductor na ƙarni na uku sun haɗa da gallium nitride da silicon carbide. Saboda faffadan bandejin su, babban saurin saturation na lantarki, haɓakar zafin jiki mai ƙarfi, da ƙarfin fage mai ƙarfi, kayan aiki ne masu kyau don shirya ƙarfin ƙarfin ƙarfi, mitoci, da ƙananan na'urorin lantarki. Daga cikin su, na'urorin wutar lantarki na silicon carbide suna da fa'idodi na yawan ƙarfin kuzari, ƙarancin amfani da makamashi, da ƙaramin girman, kuma suna da fa'idodin aikace-aikacen sabbin motocin makamashi, hotuna, jigilar jirgin ƙasa, manyan bayanai, da sauran fannoni. Na'urorin RF na Gallium nitride suna da fa'idodin mitar mitoci, babban iko, faffadan bandwidth, ƙarancin wutar lantarki da ƙananan girman, kuma suna da fa'idodin aikace-aikacen a cikin sadarwar 5G, Intanet na Abubuwa, radar soja da sauran fannoni. Bugu da ƙari, an yi amfani da na'urori masu amfani da wutar lantarki na gallium nitride a cikin ƙananan ƙarfin lantarki. Bugu da ƙari, a cikin 'yan shekarun nan, ana sa ran kayan gallium oxide masu tasowa za su samar da haɗin gwiwar fasaha tare da fasahar SiC da GaN na yanzu, kuma suna da yuwuwar aikace-aikacen aikace-aikacen a cikin ƙananan mitoci da manyan ƙarfin lantarki.

Idan aka kwatanta da na biyu-ƙarni na semiconductor kayan, na uku-ƙarni semiconductor kayan suna da fadi da fadi da bandgap (bandgap nisa na Si, na hali abu na farko-ƙarni semiconductor abu, ne game da 1.1eV, da bandgap nisa na GaAs, da hankula abu na ƙarni na biyu semiconductor abu, kusan 1.42eV, da bandgap nisa na GaN, na hali kayan na Abubuwan semiconductor na ƙarni na uku, yana sama da 2.3eV), ƙarfin juriya na radiation, juriya mai ƙarfi ga rushewar filin lantarki, da juriya mai girma. Na uku-ƙarni na semiconductor kayan tare da fadi bandgap nisa musamman dace da samar da radiation-resistant, high-mita, high-ikon da kuma high-yawa-yawan na'urorin lantarki. Aikace-aikacen su a cikin na'urorin mitar rediyo na microwave, LEDs, lasers, na'urorin wutar lantarki da sauran fagage sun jawo hankali sosai, kuma sun nuna fa'idodin ci gaba a cikin sadarwar wayar hannu, grid mai kaifin baki, jigilar dogo, sabbin motocin makamashi, na'urorin lantarki, da ultraviolet da shuɗi. -Na'urorin haske koren [1].