VET Energy GaN akan Silicon Wafer shine babban maganin semiconductor wanda aka tsara musamman don aikace-aikacen mitar rediyo (RF). Ta hanyar haɓaka haɓakar gallium nitride (GaN) mai inganci akan siliki, VET Energy yana ba da dandamali mai tsada da inganci don kewayon na'urorin RF.
Wannan GaN akan wafer Silicon ya dace da wasu kayan kamar Si Wafer, SiC Substrate, SOI Wafer, da SiN Substrate, yana faɗaɗa haɓakar sa don hanyoyin ƙirƙira iri-iri. Bugu da ƙari, an inganta shi don amfani da Epi Wafer da kayan haɓaka kamar Gallium Oxide Ga2O3 da AlN Wafer, waɗanda ke ƙara haɓaka aikace-aikacen sa a cikin manyan kayan lantarki. An tsara wafers don haɗin kai maras kyau a cikin tsarin masana'antu ta hanyar amfani da daidaitattun kaset don sauƙin amfani da haɓaka haɓakar samarwa.
VET Energy yana ba da cikakkiyar fayil na kayan aikin semiconductor, gami da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, da AlN Wafer. Layin samfurin mu daban-daban yana biyan bukatun aikace-aikacen lantarki daban-daban, daga na'urorin lantarki zuwa RF da optoelectronics.
GaN akan Silicon Wafer yana ba da fa'idodi da yawa don aikace-aikacen RF:
• Babban aiki mai girma:Faɗin bandgap na GaN da babban motsi na lantarki yana ba da damar aiki mai tsayi, yana mai da shi manufa don 5G da sauran tsarin sadarwa mai sauri.
• Babban ƙarfin ƙarfi:Na'urorin GaN za su iya ɗaukar ƙarfin ƙarfin ƙarfi idan aka kwatanta da na'urorin tushen silicon na gargajiya, wanda ke haifar da ƙarin ƙaƙƙarfan tsarin RF.
• Rashin wutar lantarki:Na'urorin GaN suna nuna ƙarancin amfani da wutar lantarki, yana haifar da ingantaccen ƙarfin kuzari da rage ɓarkewar zafi.
Aikace-aikace:
• Sadarwar mara waya ta 5G:GaN akan wafers na Silicon suna da mahimmanci don gina manyan tashoshin tushe na 5G da na'urorin hannu.
• Tsarukan Radar:Ana amfani da amplifiers na tushen GaN a cikin tsarin radar don ingantaccen ingancin su da faffadan bandwidth.
• Sadarwar tauraron dan adam:Na'urorin GaN suna ba da damar tsarin sadarwar tauraron dan adam mai ƙarfi da mitoci mai ƙarfi.
• Kayan lantarki na soja:Ana amfani da abubuwan haɗin RF na tushen GaN a aikace-aikacen soja kamar yaƙin lantarki da tsarin radar.
VET Energy yana ba da GaN na musamman akan wafers na Silicon don biyan takamaiman buƙatun ku, gami da matakan doping daban-daban, kauri, da girman wafer. Ƙwararrun ƙwararrunmu suna ba da goyan bayan fasaha da sabis na tallace-tallace don tabbatar da nasarar ku.
BAYANIN WAFERING
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6 ku | ≤6 ku | |||
Bow(GF3YFCD) - Cikakken Ƙimar | ≤15 μm | ≤15 μm | ≤25μm | ≤15 μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40 μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafar Edge | Beveling |
SURFACI GAME
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
Ƙarshen Sama | Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Kwakwalwa na Edge | Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm) | ||||
Indents | Babu Wanda Ya Halatta | ||||
Scratches (Si-Face) | Qty.≤5, Taruwa | Qty.≤5, Taruwa | Qty.≤5, Taruwa | ||
Karas | Babu Wanda Ya Halatta | ||||
Ƙarƙashin Ƙarfi | 3 mm |