6 inch Semi Insulating SiC Wafer

Takaitaccen Bayani:

VET Energy 6 inch Semi-insulating silicon carbide (SiC) wafer shine ingantaccen kayan aiki mai inganci don aikace-aikacen lantarki da yawa. Makamashi na VET yana amfani da dabarun haɓaka ci gaba don samar da wafers na SiC tare da ingantacciyar kristal, ƙarancin ƙarancin lahani, da babban juriya.


Cikakken Bayani

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6 inch Semi Insulating SiC Wafer daga VET Energy shine ingantaccen bayani don babban iko da aikace-aikacen mitoci mai girma, yana ba da ingantaccen yanayin zafi da kuma rufin lantarki. Waɗannan ɓangarorin masu rufewa suna da mahimmanci a cikin haɓaka na'urori irin su amplifiers RF, maɓallan wuta, da sauran abubuwan haɗin wuta mai ƙarfi. Makamashi na VET yana tabbatar da daidaiton inganci da aiki, yana mai da waɗannan wafers manufa don ɗimbin hanyoyin ƙirƙira semiconductor.

Baya ga fitattun kaddarorin su na rufewa, waɗannan wafers na SiC sun dace da kayayyaki iri-iri da suka haɗa da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, da Epi Wafer, wanda ke sa su zama masu dacewa don nau'ikan hanyoyin masana'antu daban-daban. Bugu da ƙari, kayan haɓakawa kamar Gallium Oxide Ga2O3 da AlN Wafer ana iya amfani da su tare da waɗannan wafers na SiC, suna ba da sassauci mafi girma a cikin manyan na'urorin lantarki. An tsara wafers don haɗin kai maras kyau tare da tsarin sarrafawa na masana'antu kamar tsarin Cassette, yana tabbatar da sauƙin amfani a cikin saitunan samar da yawa.

VET Energy yana ba da cikakkiyar fayil na kayan aikin semiconductor, gami da Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, Gallium Oxide Ga2O3, da AlN Wafer. Layin samfurin mu daban-daban yana biyan bukatun aikace-aikacen lantarki daban-daban, daga na'urorin lantarki zuwa RF da optoelectronics.

6 inch Semi-insulating SiC wafer yana ba da fa'idodi da yawa:
Babban rushewar wutar lantarki: Faɗin bandgap na SiC yana ba da damar manyan ƙarfin rushewa, yana ba da damar ƙarin na'urori masu ƙarfi da inganci.
Aiki mai zafi mai zafi: SiC's ƙwaƙƙwarar ƙarancin zafin jiki yana ba da damar aiki a yanayin zafi mafi girma, inganta amincin na'urar.
Ƙananan juriya: Na'urorin SiC suna nuna ƙananan juriya, rage asarar wutar lantarki da inganta ingantaccen makamashi.

VET Energy yana ba da wafers na SiC wanda za'a iya daidaita shi don biyan takamaiman buƙatunku, gami da kauri daban-daban, matakan ƙara kuzari, da ƙarewar saman. Ƙwararrun ƙwararrunmu suna ba da goyan bayan fasaha da sabis na tallace-tallace don tabbatar da nasarar ku.

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BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6 ku

≤6 ku

Bow(GF3YFCD) - Cikakken Ƙimar

≤15 μm

≤15 μm

≤25μm

≤15 μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40 μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafar Edge

Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

Ƙarshen Sama

Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Kwakwalwa na Edge

Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)

Indents

Babu Wanda Ya Halatta

Scratches (Si-Face)

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Karas

Babu Wanda Ya Halatta

Ƙarƙashin Ƙarfi

3 mm

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