12 inch Silicon Wafer don Ƙirƙirar Semiconductor

Takaitaccen Bayani:

VET Energy 12-inch silicon wafers sune ainihin kayan yau da kullun na masana'antar kera semiconductor. VET Energy yana amfani da fasaha na ci gaba na CZ don tabbatar da cewa wafers suna da ingantacciyar ingancin kristal, ƙarancin lahani da babban daidaituwa, yana ba da ingantaccen abin dogaro ga na'urorin ku na semiconductor.


Cikakken Bayani

Tags samfurin

Silicon Wafer inch 12 don Ƙirƙirar Semiconductor wanda VET Energy ke bayarwa an ƙirƙira shi ne don saduwa da madaidaitan ƙa'idodin da ake buƙata a masana'antar semiconductor. A matsayin ɗaya daga cikin manyan samfuran a cikin jeri na mu, VET Energy yana tabbatar da cewa ana samar da waɗannan wafers tare da madaidaicin lebur, tsabta, da ingancin saman, yana mai da su manufa don aikace-aikacen ɓangarorin semiconductor, gami da microchips, firikwensin, da na'urorin lantarki na ci gaba.

Wannan wafer ɗin ya dace da abubuwa da yawa kamar Si Wafer, SiC Substrate, SOI Wafer, SiN Substrate, da Epi Wafer, yana ba da kyakkyawan aiki ga hanyoyin ƙirƙira iri-iri. Bugu da ƙari, yana haɗuwa da kyau tare da fasaha na ci gaba kamar Gallium Oxide Ga2O3 da AlN Wafer, yana tabbatar da cewa za a iya haɗa shi cikin aikace-aikace na musamman. Don aiki mai santsi, an inganta wafer don amfani tare da daidaitattun tsarin kaset na masana'antu, yana tabbatar da ingantaccen kulawa a masana'antar semiconductor.

Layin samfurin VET Energy bai iyakance ga wafern silicon ba. Har ila yau, muna samar da nau'i-nau'i na kayan haɗin gwiwar semiconductor, ciki har da SiC Substrate, SOI Wafer, SiN Substrate, Epi Wafer, da dai sauransu, da kuma sababbin ƙananan bandgap semiconductor kayan kamar Gallium Oxide Ga2O3 da AlN Wafer. Waɗannan samfuran za su iya biyan buƙatun aikace-aikacen abokan ciniki daban-daban a cikin wutar lantarki, mitar rediyo, firikwensin da sauran filayen.

Yankunan aikace-aikace:
Chips dabaru:Ƙirƙirar kwakwalwan kwamfuta masu inganci kamar CPU da GPU.
Ƙwaƙwalwar ƙwaƙwalwa:Ƙirƙirar kwakwalwan ƙwaƙwalwar ajiya kamar DRAM da NAND Flash.
Analog Chips:Kera kwakwalwan analog kamar ADC da DAC.
Sensors:Na'urori masu auna firikwensin MEMS, na'urori masu auna hoto, da sauransu.

VET Energy yana ba abokan ciniki da keɓance hanyoyin magance wafer, kuma suna iya keɓance wafers tare da tsayayya daban-daban, abun ciki na oxygen daban-daban, kauri daban-daban da sauran ƙayyadaddun ƙayyadaddun takamaiman bukatun abokan ciniki. Bugu da ƙari, muna kuma ba da tallafin fasaha na ƙwararru da sabis na tallace-tallace bayan-tallace-tallace don taimaka wa abokan ciniki su inganta matakan samarwa da inganta yawan samfurin.

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BAYANIN WAFERING

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

TTV(GBIR)

≤6 ku

≤6 ku

Bow(GF3YFCD) - Cikakken Ƙimar

≤15 μm

≤15 μm

≤25μm

≤15 μm

Warp(GF3YFER)

≤25μm

≤25μm

≤40 μm

≤25μm

LTV(SBIR) -10mmx10mm

<2μm

Wafar Edge

Beveling

SURFACI GAME

*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating

Abu

8-inci

6-Inci

4-Inci

nP

n-Pm

n-Ps

SI

SI

Ƙarshen Sama

Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP

SurfaceRoughness

(10um x 10um) Si-FaceRa≤0.2nm
C-Face Ra≤ 0.5nm

(5umx5um) Si-Face Ra≤0.2nm
C-Face Ra≤0.5nm

Kwakwalwa na Edge

Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm)

Indents

Babu Wanda Ya Halatta

Scratches (Si-Face)

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Qty.≤5, Taruwa
Length≤0.5× wafer diamita

Karas

Babu Wanda Ya Halatta

Ƙarƙashin Ƙarfi

3 mm

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