Wannan 6 Inch N Nau'in SiC Wafer an ƙera shi don haɓaka aiki a cikin matsanancin yanayi, yana mai da shi kyakkyawan zaɓi don aikace-aikacen da ke buƙatar ƙarfin ƙarfi da juriya na zafin jiki. Mabuɗin samfuran da ke da alaƙa da wannan wafer sun haɗa da Si Wafer, SiC Substrate, SOI Wafer, da SiN Substrate. Waɗannan kayan aikin suna tabbatar da ingantaccen aiki a cikin matakai daban-daban na masana'antu na semiconductor, kunna na'urori waɗanda ke da ƙarfin kuzari da dorewa.
Ga kamfanonin da ke aiki tare da Epi Wafer, Gallium Oxide Ga2O3, Cassette, ko AlN Wafer, VET Energy's 6 Inch N Nau'in SiC Wafer yana ba da tushe mai mahimmanci don haɓaka samfura. Ko yana cikin na'urorin lantarki mai ƙarfi ko na baya-bayan nan a cikin fasahar RF, waɗannan wafers suna tabbatar da kyakkyawan aiki da ƙarancin juriya, yana tura iyakoki na inganci da aiki.
BAYANIN WAFERING
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
TTV(GBIR) | ≤6 ku | ≤6 ku | |||
Bow(GF3YFCD) - Cikakken Ƙimar | ≤15 μm | ≤15 μm | ≤25μm | ≤15 μm | |
Warp(GF3YFER) | ≤25μm | ≤25μm | ≤40 μm | ≤25μm | |
LTV(SBIR) -10mmx10mm | <2μm | ||||
Wafar Edge | Beveling |
SURFACI GAME
*n-Pm=n-nau'in Pm-Grade,n-Ps=n-nau'in Ps-Grade,Sl=Semi-lnsulating
Abu | 8-inci | 6-Inci | 4-Inci | ||
nP | n-Pm | n-Ps | SI | SI | |
Ƙarshen Sama | Yaren mutanen Poland na gani na gefe biyu, Si- Face CMP | ||||
SurfaceRoughness | (10um x 10um) Si-FaceRa≤0.2nm | (5umx5um) Si-Face Ra≤0.2nm | |||
Kwakwalwa na Edge | Babu Wanda Ya Halatta (tsawo da nisa≥0.5mm) | ||||
Indents | Babu Wanda Ya Halatta | ||||
Scratches (Si-Face) | Qty.≤5, Taruwa | Qty.≤5, Taruwa | Qty.≤5, Taruwa | ||
Karas | Babu Wanda Ya Halatta | ||||
Ƙarƙashin Ƙarfi | 3 mm |