SiC Coating Carrier Don RTP/RTA shine maɓalli mai mahimmanci da aka yi amfani da shi a cikin matakan masana'antu na semiconductor da ake kira Rapid Thermal Processing & Annealing, muna amfani da fasahar ƙwararrun mu don yin jigilar siliki tare da tsafta mai ƙarfi, ingantaccen suturar sutura da kyakkyawar rayuwar sabis, kamar yadda da high sinadaran juriya da thermal kwanciyar hankali Properties.
Siffofin samfuranmu:
1. High zafin jiki hadawan abu da iskar shaka juriya har zuwa 1700 ℃.
2. Babban tsafta da daidaituwar thermal
3. Excellent lalata juriya: acid, alkali, gishiri da kuma Organic reagents.
4. Babban taurin, m surface, lafiya barbashi.
5. Tsawon rayuwar sabis kuma mafi dorewa
| CVD SiC薄膜基本物理性能 Asalin kaddarorin jiki na CVD SiCshafi | |
| 性质 / Dukiya | 典型数值 / Yawan Daraja |
| 晶体结构 / Tsarin Crystal | FCC β lokaci多晶，主要为（111) 取向 |
| 密度 / Yawan yawa | 3.21g/cm³ |
| 硬度 / Tauri | 2500 维氏硬度 (500g kaya) |
| 晶粒大小 / Hatsi SiZe | 2 ~ 10 μm |
| 纯度 / Sinadaran Tsabta | 99.99995% |
| 热容 / Ƙarfin zafi | 640kg-1· K-1 |
| 升华温度 / Sublimation Zazzabi | 2700 ℃ |
| 抗弯强度 / Ƙarfin Flexural | 415 MPa RT 4-point |
| 杨氏模量 / Matasa Modul | 430 Gpa 4pt lankwasa, 1300 ℃ |
| 导热系数 / ThermalGudanarwa | 300 w·m-1· K-1 |
| 热膨胀系数 / Fadada thermal (CTE) | 4.5×10-6K-1 |
VET Energy shine ainihin masana'anta na samfuran graphite na musamman da samfuran silicon carbide tare da sutura daban-daban kamar suturar SiC, murfin TaC, murfin carbon gilashi, murfin carbon pyrolytic, da sauransu, na iya samar da sassa daban-daban na musamman don semiconductor da masana'antar hotovoltaic.
Ƙungiyarmu ta fasaha ta fito ne daga manyan cibiyoyin bincike na gida, za su iya samar da ƙarin ƙwararrun kayan aiki don ku.
Muna ci gaba da haɓaka matakai na ci gaba don samar da ƙarin kayan haɓaka, kuma mun yi aiki da fasaha ta keɓance mai ƙima, wanda zai iya sanya haɗin kai tsakanin shafi da abin da ke ƙasa ya fi ƙarfin kuma ba shi da haɗari ga ɓarna.
Barka da zuwa ziyarci masana'antar mu, bari mu kara tattaunawa!
