I-SiC coated suscetpor iyisici esibalulekile esisetshenziswa ezinqubweni zokukhiqiza ezahlukahlukene ze-semiconductor. Sisebenzisa ubuchwepheshe bethu obunelungelo lobunikazi ukwenza i-SiC coated suscetpor ibe nokuhlanzeka okuphezulu kakhulu, ukufana okuhle kokunamathela nempilo yesevisi enhle kakhulu, kanye nokumelana namakhemikhali okuphezulu kanye nezakhiwo ezishisayo ezishisayo.
Izici zemikhiqizo yethu:
1. Ukumelana nokushisa okuphezulu kwe-oxidation kufika ku-1700 ℃.
2. Ukuhlanzeka okuphezulu nokufana okushisayo
3. Ukumelana nokugqwala okuhle kakhulu: i-asidi, i-alkali, usawoti kanye nama-organic reagents.
4. Ukuqina okuphezulu, indawo ehlangene, izinhlayiya ezinhle.
5. Impilo yesevisi ende futhi ihlala isikhathi eside
| I-CVD SiC薄膜基本物理性能 Izakhiwo eziyisisekelo ze-CVD SiCenamathela | |
| 性质 / Impahla | 典型数值 / Inani Elijwayelekile |
| 晶体结构 / Isakhiwo seCrystal | I-FCC β isigaba多晶，主要為（111）取向 |
| 密度 / Ukuminyana | 3.21 g/cm³ |
| 硬度 / Ukuqina | 2500 维氏硬度 (500g umthwalo) |
| 晶粒大小 / Uhlamvu SiZe | 2 ~ 10μm |
| 纯度 / Ukuhlanzeka Kwamakhemikhali | 99.99995% |
| 热容 / Amandla Okushisa | 640 J·kg-1·K-1 |
| 升华温度 / I-Sublimation Temperature | 2700 ℃ |
| 抗弯强度 / Amandla Aguquguqukayo | 415 MPa RT 4-iphoyinti |
| 杨氏模量 / I-Modulus Encane | 430 Gpa 4pt ukugoba, 1300℃ |
| 导热系数 / ThermalI-Conductivity | 300Wm-1·K-1 |
| 热膨胀系数 / Ukwandiswa Kokushisa (CTE) | 4.5×10-6K-1 |
Siyakwamukela ngokufudumele ukuthi uvakashele ifekthri yethu, ake sibe nengxoxo eyengeziwe!
