Incazelo:
I-Silicon Carbide inendawo yokumelana nokugqwala okuhle kakhulu, amandla amakhulu emishini, amandla aphezulu okushisa, ukuzigcoba okuhle okusetshenziswa njengobuso bophawu, amabherethi namashubhu kumkhumbi-mkhathi, imishini, i-metallurgy, ukuphrinta nokudaya, ukudla, imithi, imboni yezimoto nokunye. ku. Lapho ubuso be-sic buhlanganiswe nobuso be-graphite ukungqubuzana kuncane kakhulu futhi kungenziwa kube izigxivizo zemishini ezikwazi ukusebenza ngezidingo eziphezulu zokusebenza.
Izakhiwo eziyisisekelo ze-Silicon Carbide:
-Ukuminyana okuphansi
-I-thermal conductivity ephezulu (eduze ne-aluminium)
-Ukumelana nokushaqeka okuhle kokushisa
-Ubufakazi boketshezi negesi
-I-refractoriness ephezulu (ingasetshenziswa ku-1450 ℃ emoyeni kanye ne-1800 ℃ emkhathini ongathathi hlangothi)
-Ayithintwa ukugqwala futhi ayimanzisi nge-aluminium encibilikisiwe noma i-zinc encibilikisiwe.
-Ukuqina okuphezulu
-I-coefficient yokungqubuzana okuphansi
-Ukumelana nemihuzuko
-Imelana nama-asidi ayisisekelo futhi aqinile
-Iyaphucuzeka
-Amandla aphezulu emishini
Isicelo seSilicon Carbide:
-Izigxivizo zemishini, ama-bearings, ama-thrust bears, njll
-Amalunga ajikelezayo
-Semiconductor kanye enamathela
-Pizikhangiso Pump izingxenye
-Izingxenye zamakhemikhali
-Izibuko zezinhlelo ze-laser zezimboni.
- Ama-reactors agelezayo, izishintshi zokushisa, njll.
Isici
I-silicon carbide yenziwa ngezindlela ezimbili:
1)Pi-silicon carbide engenasici
Ngemva kokuba impahla ye-silicon carbide engacindezeli isifakiwe, umdwebo wesigaba se-crystal ngaphansi kwe-200X optical microscope ubonisa ukuthi ukusatshalaliswa nobukhulu bamakristalu kufana, futhi ikristalu enkulu kunazo zonke ayidluli i-10μm.
2) RI-silicon carbide eyenziwe nge-eaction sintered
Ngemuva kokusabela i-silicon carbide iphatha ngamakhemikhali ingxenye eyisicaba nebushelelezi yezinto ezibonakalayo, ikristalu
ukusatshalaliswa nosayizi ngaphansi kwe-200X optical microscope kufana, futhi okuqukethwe kwe-silicon yamahhala akudluli u-12%.
Izakhiwo Zobuchwepheshe | |||
Inkomba | Iyunithi | Inani | |
Igama Lempahla | Pressureless Sintered Silicon Carbide | Ukusabela Sintered Silicon Carbide | |
Ukwakheka | I-SSiC | I-RBSiC | |
Ukuminyana kwenqwaba | g/cm3 | 3.15 ± 0.03 | 3 |
Amandla e-Flexural | I-MPa (kpsi) | 380(55) | 338(49) |
Amandla Acindezelayo | I-MPa (kpsi) | 3970(560) | 1120(158) |
Ukuqina | Knoop | 2800 | 2700 |
Breaking Tenacity | I-MPa m1/2 | 4 | 4.5 |
I-Thermal Conductivity | W/mk | 120 | 95 |
I-Coefficient of Thermal Expansion | 10-6/°C | 4 | 5 |
Ukushisa Okuthize | I-Joule/g 0k | 0.67 | 0.8 |
Izinga lokushisa eliphezulu emoyeni | ℃ | 1500 | 1200 |
I-Elastic Modulus | I-Gpa | 410 | 360 |