I-SiC Coated

I-VET ENERGY, Umkhiqizi ohamba phambili we-CVD SIC coating e-China

Izinto Zishintsha Ikusasa

I-Silicon carbide (i-SiC) iyinto entsha ehlanganisiwe ye-semiconductor. I-Silicon carbide inegebe elikhulu lebhande (cishe izikhathi ze-silicon izikhathi ezi-3), amandla ensimu abalulekile (cishe izikhathi ezingu-10 ze-silicon), i-conductivity ephezulu yokushisa (cishe izikhathi ezi-3 ze-silicon). Kuyinto ebalulekile yesizukulwane esilandelayo semiconductor. Izembatho ze-SiC zisetshenziswa kabanzi embonini ye-semiconductor kanye ne-solar photovoltaics. Ikakhulukazi, ama-susceptors asetshenziswa ekukhuleni kwe-epitaxial kwama-LED kanye ne-Si single crystal epitaxy adinga ukusetshenziswa kwe-SiC coating. Ngenxa yokukhula okuqinile kwama-LED embonini yokukhanyisa nokubonisa, kanye nokuthuthukiswa okunamandla kwemboni ye-semiconductor,SiC enamathela umkhiqizoamathemba mahle kakhulu.

INKINGA YOKUSEBENZA

Ukusetshenziswa komkhiqizo nokusebenza Izicelo zomkhiqizo kanye nokusetshenziswa

I-Si single crystal industry, i-GaN, i-AlN, isafire nezinye izisekelo ze-MOCVD. -I-graphite base coating yokukhula kwe-crystal silicon epitaxial eyodwa

Ukusebenza okuyinhloko: ukuhlanzeka okuphezulu, ukumelana nokuguguleka, ukuguquguquka okuphezulu kwe-thermal, - Inqubo ye-MOCVD, isisekelo se-graphite sokuhlanganisa ukukhula kwe-GaN epitaxial

ukumelana nokushisa okuphezulu, i-coefficient ephansi yokwandisa okushisayo.

I-MOCVD susceptors

I-Monocrystalline silicon epitaxial susceptors

I-Plasma etching disk

Imikhiqizo ye-Solar photovoltaic

Imboni yeSemiconductor

I-solar photovoltaic

I-Thermal Conductivity	250 W/m °K	Indlela ye-Laser flash, RT
I-Thermal Expansion (CTE)	4.5 x 10^-6°K	Izinga lokushisa legumbi liye ku-950 °C, i-silica dilatometer
Impahla	Inani	Indlela
Ukuminyana	3.21 g/cc	Sink-float kanye nobukhulu
Ukushisa okuqondile	0.66 J/g °K	I-Pulsed laser flash
Amandla e-Flexural	450 MPa560 MPa	4 iphuzu ukugoba, RT4 iphuzu ukugoba, 1300°
Ukuqina kokuphuka	2.94 MPa m1/2	I-Microindentation
Ukuqina	2800	Vicker, 500g umthwalo
I-Elastic ModulusYoung's Modulus	450 GPA430 GPA	4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Usayizi wokusanhlamvu	2 - 10µm	I-SEM

Ukuhlanzeka, Isakhiwo se-SEM, ukuhlaziywa kokuqina kweUkufakwa kwe-SiC

Ukuhlanzeka kwezingubo ze-SiC ku-graphite ngokusebenzisa i-CVD kuphezulu njenge-99.9995%. Isakhiwo sayo yi-fcc. Amafilimu e-SiC ahlanganiswe ku-graphite (111) aqondiswe njengoba kuboniswe kudatha ye-XRD (Fig.1) ebonisa ikhwalithi yayo ephezulu ye-crystalline. Ubukhulu befilimu ye-SiC bufana kakhulu njengoba kuboniswe ku-Fig. 2.

Idatha ye-SEM yefilimu ezacile ye-CVD SiC, usayizi wekristalu ungu-2~1 Opm

Umfanekiso 2: iyunifomu yokuqina yamafilimu e-SiC

Isakhiwo sekristalu sefilimu ye-CVD SiC yisakhiwo se-cubic esigxile ebusweni, futhi ukuqondisa kokukhula kwefilimu kusondele ku-100%

I-SEM ne-XRD yefilimu ye-beta-SiC ku-graphite

I-SINGLE CRYSTAL SILICON EPITAXIAL BASE

Ukusebenza komkhiqizo kanye namathemba ohlelo lokusebenza.

I-Silicon carbide (SiC) ihlanganisweisisekelo siyisisekelo esingcono kakhulu se-crystal silicon eyodwa ne-GaN epitaxy, okuyingxenye eyinhloko yesithando somlilo se-epitaxy. Isisekelo siyisisetshenziswa esibalulekile sokukhiqiza se-silicon ye-monocrystalline yamasekethe amakhulu ahlanganisiwe. Inobumsulwa obuphezulu, ukumelana nokushisa okuphezulu, ukumelana nokugqwala, ukucinana komoya okuhle nezinye izici ezinhle kakhulu zempahla.

Isicelo kanye nokusetshenziswa komkhiqizo

Isisekelo se-graphite sokukhula kwe-crystal silicon epitaxial eyodwaIfanele imishini ye-Aixtron, njll Ugqinsi lwe-Coating: 90~150umUbubanzi be-wafer crater ngu-55mm.

I-SOLAR PHOTOVOLTAIC

I-GAupidpelitcubaetiaonnd

i-graphite crucible coatingye-crystal silicon eyodwa ngendlela yokudonsa okuqondile

ukukhiqizwa kwezimboni ze-crystal silicon eyodwa ngendlela yokudonsa okuqondile,i-crucible enamacembe amathathunjengezingxenye zokushisa eziphezulu kanye nezingxenye zokushisa ezifanayo, ishubhu lokugeleza njengezingxenye zokuhambisa igesi ephumayo, ishubhu lokugeleza njengesiteshi sokuphuma kwegesi

I-HEATER, I-GRAPHITE PLATE, I-GRAPHITE CYLINDER, ISHIDI LE-GRAFHITE KANYEEZINYE IZIQEPHU EZINEMI

Izici zomkhiqizo

Ukumelana nezinga lokushisa eliphezulu, ukumelana nokugqwala, impilo ende yesevisi, kungathuthukisa ikhwalithi nokuphuma kwe-wafer. Nge-coefficient ephansi kakhulu yokwandisa okushisayo, ukumelana nokushisa okuphezulu, ukumelana nokugqoka okuphezulu, ukufakwa kahle kwe-insulation, ukuzinza okuhle kwamakhemikhali, eduze nokunsomi (obomvu) ngaphandle kokungena kokukhanya okubonakalayo.

Kungani ukhethe thina

Imishini yobuchwepheshe nethimba

I-workshop ye-Class 1000 engenazo izintuli

*ngaphezu kwamamitha-skwele angama-3000 we-workshop yekilasi eyi-1000 engenalo uthuli

*Ithimba le-Cooperative R & D le-Chinese Academy of Sciences

*Ukukhiqiza okukhethekile kanye nemishini yokuhlola ukunemba

*Amandla okukhiqiza anele futhi aphezulu

Isevisi esheshayo

Ngethegi ye-oda langaphambili, ithimba lethu labadayisi elichwepheshile lingaphendula umbuzo wakho phakathi kwemizuzu engama-50-100 phakathi namahora okusebenza naphakathi kwamahora ayi-12 phakathi nesikhathi sokuvala. Impendulo esheshayo nechwepheshile izokusiza ukuthi uwine iklayenti lakho ngenketho ekahle ekusebenzeni kahle okuphezulu.

Esigabeni sokwenza ama-oda, ithimba lethu lesevisi elichwepheshile lizothatha izithombe njalo ezinsukwini ezi-3 kuya kwezi-5 ukuze uthole isibuyekezo sesandla sokuqala somkhiqizo futhi likunikeze imibhalo phakathi kwamahora angu-36 ukuze libuyekeze ukuqhubeka kokuthunyelwa. Sinaka kakhulu isevisi yangemva kokuthengisa.

Esigabeni sangemva kokuthengisa, ithimba lethu lesevisi lihlala lixhumana nawe futhi lihlala likulindile. Isevisi yethu yobuchwepheshe emva kokuthengisa ifaka ngisho nonjiniyela bethu ukukusiza ukuxazulula izinkinga esizeni. Iwaranti yethu iyizinyanga eziyi-12 ngemuva kokulethwa.

Imininingwane yokupakisha

I-Ningbo VET Energy Technology Co., Ltd ingumkhiqizi ochwepheshe wezingxenye ze-graphite, ikakhulukazi ekuthuthukiseni izinto ezintsha ze-semiconductor futhi igxile ocwaningweni nasekuthuthukisweni kwe-SiC coating. Imikhiqizo eyinhloko yale nkampani yizithambisi eziboshwe nge-SiC zemboni ye-LED kanye nemboni ye-silicon ye-monocrystalline. Ifilimu ye-SiC esetshenziselwa imboni ye-LED kanye nemboni ye-silicon ye-monocrystalline iyisigaba se-cubic, esinesakhiwo esifanayo se-lattice njengedayimane, futhi ukuqina kwayo kuhle njengedayimane kuphela. I-Silicon carbide iyimpahla evuthwe kakhulu ye-gap semiconductor ye-band gap, futhi inamathuba abanzi okusebenza embonini ye-semiconductor. Ngaphezu kwalokho, i-silicon carbide ine-conductivity ephezulu yokushisa, i-coefficient encane yokwandisa ukushisa, ukumelana nokushisa okuphezulu (okungaba ngu-2700 degrees Celsius), kanye nokumelana nokugqwala okuhle kakhulu. Imikhiqizo ye-silicon carbide yokumboza isetshenziswa kabanzi ku-aerospace, imboni ye-photovoltaic, amandla enuzi, ujantshi wesivinini esikhulu, ezezimoto nezinye izimboni.

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