I-Graphite heater I-Silicon carbide (SiC) I-SiC enamathela i-SiC eboshwe

Incazelo emfushane:

Iphothifoliyo yethu ihlanganisa ama-heaters, ama-crucibles asekelayo, izivikelo zokushisa kanye nezingxenye zokushisa zezinqubo eziningi ezikhulayo zekristalu kanye nezinto zokwakha.

Siphinde sihlinzeke ngezinto ezibamba ukushisa ze-silicon epitaxy nama-MOCVD reactors. Eyaziwa ngekhwalithi yethu ephezulu engaguquki kanye nokukhiqiza komuntu ngamunye, sinikeza ukuqedela okuqondene nohlelo lokusebenza ngokuhlanza, ukucubungula ngomshini noma ukumboza.


Imininingwane Yomkhiqizo

Omaka bomkhiqizo

 

Ukucaciswa Kwezobuchwepheshe

I-VET-M3

Ukuminyana kwenqwaba (g/cm3)

≥1.85

Okuqukethwe komlotha (PPM)

≤500

Ukuqina Kwasogwini

≥45

Ukumelana Okuqondile (μ.Ω.m)

≤12

Amandla e-Flexural (Mpa)

≥40

Amandla Acindezelayo (Mpa)

≥70

Ubukhulu. Usayizi Wokusanhlamvu (μm)

≤43

I-Coefficient of Thermal Expansion Mm/°C

≤4.4*10-6

 

 

Imikhiqizo yakamuva emisha Isifudumezi se-graphite Izinzuzo ukonga amandla, inani eliphezulu kanye nezindleko zokunakekela eziphansi.

Imikhiqizo yakamuva emisha Isifudumezi se-graphite Izinzuzo ukonga amandla, inani eliphezulu kanye nezindleko zokunakekela eziphansi.

Imikhiqizo yakamuva emisha Isifudumezi se-graphite Izinzuzo ukonga amandla, inani eliphezulu kanye nezindleko zokunakekela eziphansi.

Imininingwane yokupakisha:

Imikhiqizo yakamuva emisha Isifudumezi se-graphite Izinzuzo ukonga amandla, inani eliphezulu kanye nezindleko zokunakekela eziphansi.


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