Umvelisi weziciko zegraphite eziqatywe yi-TaC

Inkcazelo emfutshane:

I-Semicera ikhokela ishishini le-semiconductor nge-tantalum carbide (TaC) umgca wemveliso ohlangabezana neemfuno ezikhulayo.Ngokufika kwe-8-intshi ye-silicon carbide (SiC) wafers, iimfuno zobushushu kwiinkqubo ezahlukeneyo ze-semiconductor ziye zaqina ngakumbi, ngakumbi inkqubo ye-epitaxial, enokufikelela ngaphezu kwe-2000 degrees Celsius.Izinto ezisisiseko zemveli, ezifana negraphite eqatywe nge-silicon carbide, ithande ukuthomalalisa kumaqondo obushushu aphezulu kwaye itshabalalise inkqubo ye-epitaxial.I-CvD tantalum carbide (TaC) ibonelela ngesisombululo esisebenzayo kule ngxaki, ekwaziyo ukumelana namaqondo obushushu ukuya kutsho kuma-2300 degrees Celsius kwaye ibonelele ubomi benkonzo obude.Wamkelekile ukuba uqhagamshelane neSemicera ukuze ufunde malunga neepleyiti zethu ezigqunywe ngetantalum carbide kwaye ufunde ngakumbi malunga nezisombululo zethu eziphambili.Iimveliso zethu ziya kunika ukhuseleko oluhle kakhulu kwinkqubo yakho ye-epitaxial, ukuqinisekisa ukuzinza kweqondo lokushisa kunye nobomi benkonzo ende, ngaloo ndlela kuphuculwe ukusebenza kakuhle kwenkqubo, ukunciphisa iindleko, kunye nokunceda ufezekise impumelelo enkulu.


Iinkcukacha zeMveliso

Iithegi zeMveliso

Ukwaleka kwe-TaC luhlobo lwe-tantalum carbide (TaC) yokwambathisa elungiselelwe yitekhnoloji yokubeka umphunga womzimba, inezi mpawu zilandelayo:

1. Ubulukhuni obuphezulu: Ukuqina kwe-TaC yokwambathisa kuphezulu, ngokuqhelekileyo kunokufikelela kwi-2500-3000HV, yinto ebalaseleyo yokugquma.

2. Ukumelana nokunxiba: I-TaC yokwambathisa ayigugi kakhulu, enokuthi inciphise ngokufanelekileyo ukuguga kunye nokonakala kwamalungu oomatshini ngexesha lokusetyenziswa.

3. Ukumelana kakuhle nobushushu obuphezulu: I-TaC yokwambathisa inokugcina ukusebenza kwayo okugqwesileyo phantsi kwemekobume yobushushu obuphezulu.

4. Uzinzo olululo lweekhemikhali: I-TaC yokugquma inozinzo olululo lweekhemikhali kwaye inokumelana neentshukumo ezininzi zeekhemikhali, ezinjengeeasidi kunye neziseko.

I-TaC Coating11
I-TaC Coating10

碳化钽涂层物理特性物理特性

Iimpawu ezibonakalayo ze I-TaC ukutyabeka

密度/ Ubuninzi

14.3 (g/cm³)

ILogo Simahla Akukho mlinganiselo Ipapashwe ngu- 比辐射率 / Ukukhutshwa kwezinto ezithile

0.3

热膨胀系数 / Ukwandiswa kwe-Thermal coefficient

6.3 10-6/K

努氏硬度/ Ukuqina (HK)

2000 HK

电阻 / Ukuchasa

1×10-5 Ohm*cm

热稳定性 / Uzinzo lobushushu

<2500℃

石墨尺寸变化 / Ubungakanani bokutshintsha kwegrafu

-10 ~ -20um

涂层厚度 / Ubukhulu bokugquma

≥20um ixabiso eliqhelekileyo (35um±10um)

 

I-Ningbo VET Energy Technology Co., Ltd lishishini lobugcisa obuphezulu obugxile kwimveliso kunye nokuthengiswa kwezinto eziphezulu eziphezulu, izixhobo kunye nobuchwepheshe obugquma igraphite, i-silicon carbide, i-ceramics, unyango lomphezulu njalo njalo.Iimveliso zisetyenziswa ngokubanzi kwi-photovoltaic, semiconductor, amandla amatsha, isinyithi, njl.

Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, anokubonelela ngezisombululo zemathiriyeli yobuchwephesha.

Wamkelekile ngokufudumeleyo ukuba undwendwele umzi-mveliso wethu, makhe sibenengxoxo eyongezelelekileyo!

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