I-SiC igqunywe nge-Graphite substrate yeSemiconductor, iiTreyi zeGraphite, i-Sic Graphite epitaxy susceptors

Inkcazelo emfutshane:


  • Indawo yemvelaphi:E-Zhejiang, eTshayina (eMaphandleni)
  • Inombolo yoMfanekiso:Inombolo yoMfanekiso:
  • Ukuqulunqwa kwemichiza:I-SiC eqatywe igraphite
  • Amandla e-Flexural:470Mpa
  • I-Thermal conductivity:300 W/mK
  • Umgangatho:Igqibelele
  • Umsebenzi:CVD-SiC
  • Isicelo:Semiconductor / Photovoltaic
  • Ubuninzi:3.21 g/cc
  • Ukwandiswa kweThermal:4 10-6/K
  • Uthuthu: <5ppm
  • Isampulu:Iyafumaneka
  • Ikhowudi ye-HS:6903100000
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    I-SiC yokugquma/igqunywe nge-Graphite substrate yeSemiconductor, iiTreyi zeGraphite, iSic Graphitei-epitaxy susceptors,
    Ikhabhoni ibonelela ngezinto ezixhaphakileyo, i-epitaxy susceptors, I-Graphite Susceptors, SiC Epitaxy, inkxaso substrates,
    SiC Coated zeGraphite Abathwali

    Ingcaciso yeMveliso

    Sigcina ukunyamezelana ngokusondeleyo xa sisebenzisa i-SiC coating, sisebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo. Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezitshisayo. Onke amacandelo agqityiweyo aza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

    Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

    Inkqubo ye-CVD ihambisa ubunyulu obuphezulu ngokugqithisileyo kunye noxinaniso lwethiyori ye-SiC yokwambathisa ngaphandle kobunzima. Ngaphezu koko, njengoko i-silicon carbide inzima kakhulu, inokugudiswa kwindawo efana nesipili. I-CVD silicon carbide (SiC) yokwambathisa izise iingenelo ezininzi kubandakanya umphezulu wococeko oluphezulu kunye nokuqina kokunxiba. Njengoko iimveliso ezigqunyiweyo zisebenza kakuhle kwi-vacuum ephezulu kunye neemeko zobushushu obuphezulu, zilungele usetyenziso kwishishini le-semiconductor kunye nenye indawo ecocekileyo kakhulu. Sikwabonelela ngeemveliso zepyrolytic graphite (PG).

    Iimpawu eziphambili:

    1. Ukumelana nobushushu obuphezulu be-oxidation:

    Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

    2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

    3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

    4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

    IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

    SiC-CVD

    Ukuxinana

    (g/cc)

    3.21

    Amandla e-Flexural

    (Mpa)

    470

    Ukwandiswa kweThermal

    (10-6/K)

    4

    I-Thermal conductivity

    (W/mK)

    300

    Isicelo: I-CVD silicon carbide coating sele isetyenziswe kumashishini e-semiconductor esele, njenge-MOCVD itreyi, i-RTP kunye ne-oxide etching igumbi ekubeni i-silicon nitride inokumelana nokutshatyalaliswa okukhulu kwe-thermal kwaye inokumelana ne-plasma yamandla aphezulu.
    -I-Silicon carbide isetyenziswa ngokubanzi kwi-semiconductor kunye nokugqoka.

    Ubunakho bokubonelela:

    10000 Iqhekeza/Amaqhekeza ngenyanga
    UkuPakisha kunye nokuhanjiswa:
    Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
    Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
    Izibuko:
    Ningbo/Shenzhen/Shanghai
    Ixesha lokukhokhela:

    Ubuninzi (Amaqhekeza) 1 - 1000 >1000
    Est. Ixesha(iintsuku) 15 Kuza kuthethathethwana

     

    Ulwazi lweNkampani

    111

    Izixhobo zoMzi-mveliso

    222

    Indawo yokugcina impahla

    333

    Iziqinisekiso

    Iziqinisekiso22

    iifaqs

    Q1:Athini amaxabiso akho?
    Amaxabiso ethu axhomekeke ekutshintsheni unikezelo kunye neminye imiba yemarike. Siza kukuthumelela uluhlu lwamaxabiso oluhlaziyiweyo emva kokuba inkampani yakho iqhagamshelane nathi ngolwazi oluthe vetshe.
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    I-Q4: Liliphi ixesha eliqhelekileyo lokukhokela?
    Kwiisampuli, ixesha lokukhokela limalunga neentsuku ezi-7. Ukuveliswa kobuninzi, ixesha lokukhokela liyi-15-25 iintsuku emva kokufumana intlawulo yediphozithi. Amaxesha okukhokela ayasebenza xa sifumene idiphozithi yakho, kwaye sinemvume yakho yokugqibela yeemveliso zakho. Kuzo zonke iimeko siya kuzama ukulungiselela iimfuno zakho. Kwiimeko ezininzi siyakwazi ukwenjenjalo.
    Q5: Zeziphi iintlobo zeendlela zokuhlawula ozamkelayo?
    Unokwenza intlawulo kwiakhawunti yethu yebhanki, Western Union okanye PayPal:
    I-30% yediphozithi kwangaphambili, i-70% ibhalansi ngaphambi kokuthunyelwa okanye ikopi ye-B / L.
    Q6: Yintoni iwaranti yemveliso?
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    I-Q7: Ngaba uyaqinisekisa ukuba ukuhanjiswa kwemveliso kukhuselekile kwaye kukhuselekile?
    Ewe, sihlala sisebenzisa umgangatho ophezulu wokupakisha ngaphandle. Sikwasebenzisa ukupakishwa kweengozi ezikhethekileyo kwimpahla enobungozi kunye nabathumeli abaqinisekisiweyo abagcina izinto ezibandayo kwizinto ezinobushushu bobushushu. Ukupakishwa kweengcali kunye neemfuno zokupakisha ezingekho mgangathweni zingafaka intlawulo eyongezelelweyo.
    I-Q8:Kuthekani ngeemali zokuthumela ngenqanawa?
    Iindleko zokuthumela ngenqanawa zixhomekeke kwindlela okhetha ngayo ukufumana iimpahla. I-Express idla ngokuba yeyona ndlela ikhawulezayo kodwa ikwabiza kakhulu. Ngokuhamba ngolwandle sesona sisombululo silungileyo kwiimali ezinkulu. Ngokuchanekileyo amaxabiso omthwalo sinokukunika kuphela ukuba siyazazi iinkcukacha zesixa, ubunzima kunye nendlela. Nceda uqhagamshelane nathi ngolwazi oluthe vetshe.

     


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