I-SiC yokugquma/igqunywe nge-Graphite substrate yeSemiconductor, iiTreyi zeGraphite, iSic Graphitei-epitaxy susceptors,
Ikhabhoni ibonelela ngezinto ezixhaphakileyo, i-epitaxy susceptors, I-Graphite Susceptors, SiC Epitaxy, inkxaso substrates,
SiC Coated zeGraphite Abathwali

Sigcina ukunyamezelana ngokusondeleyo xa sisebenzisa i-SiC coating, usebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo. Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezitshisayo. Onke amacandelo agqityiweyo aza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

Inkqubo ye-CVD ihambisa ubunyulu obuphezulu ngokugqithisileyo kunye noxinaniso lwethiyori ye-SiC yokwambathisa ngaphandle kobunzima. Ngaphezu koko, njengoko i-silicon carbide inzima kakhulu, inokugudiswa kwindawo efana nesipili. I-CVD silicon carbide (SiC) yokwambathisa izise iingenelo ezininzi kubandakanya umphezulu wococeko oluphezulu kunye nokuqina kokunxiba. Njengoko iimveliso ezigqunyiweyo zisebenza kakuhle kwi-vacuum ephezulu kunye neemeko zobushushu obuphezulu, zilungele usetyenziso kwishishini le-semiconductor kunye nenye indawo ecocekileyo kakhulu. Sikwabonelela ngeemveliso zepyrolytic graphite (PG).

Iimpawu eziphambili:

1. Ukumelana nobushushu obuphezulu be-oxidation:

Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye nee-reagents eziphilayo.

IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

Isicelo: I-CVD silicon carbide coating sele isetyenziswe kumashishini e-semiconductor esele, njenge-MOCVD itreyi, i-RTP kunye ne-oxide etching igumbi ekubeni i-silicon nitride inokumelana nokutshatyalaliswa okukhulu kwe-thermal kwaye inokumelana ne-plasma yamandla aphezulu.
-I-Silicon carbide isetyenziswa ngokubanzi kwi-semiconductor kunye nokugqoka.

Ubunakho bokubonelela:

10000 Iqhekeza/Amaqhekeza ngenyanga
UkuPakisha kunye nokuhanjiswa:
Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
Izibuko:
Ningbo/Shenzhen/Shanghai
Ixesha lokukhokhela:

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