China Manufacturer SiC Coated Graphite MOCVD Epitaxy Susceptor

Inkcazelo emfutshane:

Ubunyulu <5ppm
‣ Ukuhambelana kakuhle kwe-doping
‣ Ukuxinana okuphezulu kunye nokubambelela
‣ Ilungile yokuchasana nomhlwa kunye nokumelana nekhabhoni

‣ Ukwenza ngokwezifiso
‣ Ixesha elifutshane lokuhamba
‣ Unikezelo oluzinzileyo
‣ Ukulawulwa komgangatho kunye nokuphuculwa okuqhubekayo

I-Epitaxy ye-GaN kwiSapphire(RGB/Mini/Micro LED);
I-Epitaxy ye-GaN kwi-Si Substrate(UVC);
I-Epitaxy ye-GaN kwi-Si Substrate(Isixhobo sombane);
I-Epitaxy ye-Si kwi-Si Substrate(Isekethe edibeneyo);
I-Epitaxy ye-SiC kwi-SiC Substrate(I-Substrate);
I-Epitaxy ye-InP kwi-InP

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Umgangatho ophezulu we-MOCVD Susceptor Thenga kwi-intanethi e-China

Iwafer kufuneka idlule kumanyathelo amaninzi ngaphambi kokuba ilungele ukusetyenziswa kwizixhobo zombane. Enye inkqubo ebalulekileyo yi-silicon epitaxy, apho ii-wafers ziqhutyelwa kwi-graphite susceptors. Iipropati kunye nomgangatho we-susceptors zinempembelelo ebalulekileyo kumgangatho we-wafer's epitaxial layer.

Kwizigaba ezicekethekileyo zokubeka ifilimu ezifana ne-epitaxy okanye i-MOCVD, i-VET ibonelela ngezixhobo zegraphitee ze-ultra-pure ezisetyenziselwa ukuxhasa ama-substrates okanye "ii-wafers". Embindini wenkqubo, esi sixhobo, i-epitaxy susceptors okanye iiplatifti zesathelayithi ze-MOCVD, ziqale zixhomekeke kwindawo yokubeka:

Ubushushu obuphezulu.
Vacuum ephezulu.
Ukusetyenziswa kwe-acgressive gaseous precursors.
Ukungcoliswa kungabikho, ukungabikho kokuxobuka.
Ukumelana ne-acids eqinile ngexesha lemisebenzi yokucoca

I-VET Amandla ngumvelisi wokwenyani weemveliso ezenziwe ngokwezifiso zegraphite kunye ne-silicon carbide ene-coating ye-semiconductor kunye ne-photovoltaic industry. Iqela lethu lobuchwephesha livela kumaziko aphezulu ophando lwasekhaya, linokubonelela ngezisombululo zemathiriyeli yobuchwephesha.

Sisoloko siphuhlisa iinkqubo eziphambili zokubonelela ngemathiriyeli ephucukileyo, kwaye sisebenze itekhnoloji eyodwa enelungelo elilodwa lomenzi wechiza, enokwenza iqhina phakathi kwengubo kunye ne-substrate ibe ngqongqo kwaye ingabikho lula ekuthinteleni.

Iimpawu zeemveliso zethu:

1. Ukumelana nobushushu obuphezulu be-oxidation ukuya kuthi ga kwi-1700℃.
2. Ukucoceka okuphezulu kunye nokufana kwe-thermal
3. Ukumelana nokugqwesa okugqwesileyo: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.
4. Ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.
5. Ubomi benkonzo ende kwaye buhlala ixesha elide

CVD SiC薄膜基本物理性能 Iimpawu ezisisiseko ze-CVD SiCukutyabeka
性质 / Ipropati	典型数值 / Ixabiso eliqhelekileyo
晶体结构 / Ulwakhiwo lweCrystal	FCC isigaba β多晶，主要為（111）取向
密度 / Ubuninzi	3.21 g/cm³
硬度 / Ukuqina	2500 维氏硬度 (500g umthwalo)
晶粒大小 / Ukhozo SiZe	2 ~ 10μm
纯度 / Ukucoceka kwemichiza	99.99995%
热容 / Umthamo wobushushu	640 J·kg^-1·K^-1
升华温度 / Iqondo lobushushu elisezantsi	2700℃
抗弯强度 / Amandla e-Flexural	415 MPa RT 4-inqaku
杨氏模量 / Imodyuli yabaselula	430 Gpa 4pt bend, 1300℃
导热系数 / ThermalUkuqhuba	300Wm^-1·K^-1
热膨胀系数 / Ukwandiswa kweThermal(CTE)	4.5×10^-6K^-1