Ixabiso eliphantsi loMgangatho oPhakamileyo waseTshayina oFanelweyo weSifudumezi seGraphite sePolycrystalline Silicon Ingot Furnace

Ixabiso eliphantsi laseTshayina uMgangatho oPhezulu oFanelweyo weSifudumezisi seGrafite sePolycrystalline Silicon Ingot Furnace oFakelweyo

Inkcazelo emfutshane:

Ubunyulu <5ppm
‣ Ukuhambelana kakuhle kwe-doping
‣ Ukuxinana okuphezulu kunye nokubambelela
‣ Ilungile yokuchasana nomhlwa kunye nokumelana nekhabhoni

‣ Ukwenza ngokwezifiso
‣ Ixesha elifutshane lokuhamba
‣ Unikezelo oluzinzileyo
‣ Ukulawulwa komgangatho kunye nokuphuculwa okuqhubekayo

I-Epitaxy ye-GaN kwiSapphire(RGB/Mini/Micro LED);I-Epitaxy ye-GaN kwi-Si Substrate(UVC);I-Epitaxy ye-GaN kwi-Si Substrate(Isixhobo sombane);I-Epitaxy ye-Si kwi-Si Substrate(Isekethe edibeneyo);I-Epitaxy ye-SiC kwi-SiC Substrate(I-Substrate);I-Epitaxy ye-InP kwi-InP

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Iinkcukacha zeMveliso

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Siyaqhubeka sikhula kwaye sigqibelelisa izisombululo kunye nenkonzo yethu. Kwangaxeshanye, sisebenza ngenkuthalo ukwenza uphando kunye nokuphuculwa kweXabiso eliPhantsi leTshayina eliPhakamileyo eliLungiselelwe iSifudumezi seGraphite sePolycrystalline Silicon Ingot Furnace, ishishini lethu lakhula ngokukhawuleza ngobukhulu kunye nokuthandwa ngenxa yokuzinikela kwalo ngokupheleleyo kwimveliso ekumgangatho ophezulu, ixabiso elikhulu lemveliso. iimveliso kunye nomnikezeli wabathengi omangalisayo.
Siyaqhubeka sikhula kwaye sigqibelelisa izisombululo kunye nenkonzo yethu. Kwangaxeshanye, sisebenza ngenkuthalo ukwenza uphando kunye nokuphuculaChina Graphite Ukufudumeza Furnace, I-Graphite Thermal Field, Kuphela ukuphumeza imveliso esemgangathweni ukuhlangabezana neemfuno zabathengi, zonke iimveliso zethu kunye nezisombululo ziye zahlolwa ngokungqongqo ngaphambi kokuthunyelwa. Sihlala sicinga ngombuzo kwicala labathengi, kuba uphumelele, siphumelele!

2022 umgangatho ophezulu MOCVD Susceptor Thenga online e China

Uxinzelelo olubonakalayo:	1.85 g/cm3
Ukuxhathisa koMbane:	11 μΩm
Ukuqina kweFlexural:	49 MPa (500kgf/cm2)
Ukuqina konxweme:	58
Uthuthu:	<5ppm
I-Thermal Conductivity:	116 W/mK (100 kcal/mhr-℃)

I-wafer sisilayi se-silicon malunga ne-1 millimeter ubukhulu esinomphezulu othe tyaba othe tyaba ngenxa yeenkqubo ezifunwa kakhulu ngokobuchwepheshe. Ukusetyenziswa okulandelayo kumisela ukuba yeyiphi inkqubo yokukhulisa ikristale ekufuneka isetyenziswe. Kwinkqubo yeCzochralski, umzekelo, i-silicon ye-polycrystalline iyancibilika kwaye i-crystal ye-pencil-thin imbewu ifakwe kwi-silicon etyhidiweyo. Ikristale yembewu ithi ke ijikelezwe ize itsalwe kancinane inyuke inyuke. I-colossus enzima kakhulu, i-monocrystal, iziphumo. Kunokwenzeka ukuba ukhethe iimpawu zombane ze-monocrystal ngokudibanisa iiyunithi ezincinci ze-dopants ezicocekileyo. Iikristale zifakwe ngokuhambelana neenkcukacha zabathengi kwaye ziphuculwe kwaye zinqunyulwe zibe ngamaqhekeza. Emva kwamanyathelo awongezelelweyo okuvelisa, umthengi ufumana ama-wafers akhe achaziweyo kwipakethe ekhethekileyo, evumela umthengi ukuba asebenzise i-wafer ngokukhawuleza kumgca wayo wemveliso.

Iwafer kufuneka idlule kumanyathelo amaninzi ngaphambi kokuba ilungele ukusetyenziswa kwizixhobo zombane. Enye inkqubo ebalulekileyo yi-silicon epitaxy, apho ii-wafers ziqhutyelwa kwi-graphite susceptors. Iipropati kunye nomgangatho we-susceptors zinempembelelo ebalulekileyo kumgangatho we-wafer's epitaxial layer.

Kwizigaba ezicekethekileyo zokubeka ifilimu ezifana ne-epitaxy okanye i-MOCVD, i-VET ibonelela ngezixhobo zegraphitee ze-ultra-pure ezisetyenziselwa ukuxhasa ama-substrates okanye "ii-wafers". Embindini wenkqubo, esi sixhobo, i-epitaxy susceptors okanye iiplatifti zesathelayithi ze-MOCVD, ziqale zixhomekeke kwindawo yokubeka:

Ubushushu obuphezulu.
Vacuum ephezulu.
Ukusetyenziswa kwe-acgressive gaseous precursors.
Ukungcoliswa kungabikho, ukungabikho kokuxobuka.
Ukumelana ne-acids eqinile ngexesha lemisebenzi yokucoca