IsiShayina soBuchule obucocekileyo beRhenium Filament- Mocvd

Inkcazelo emfutshane:


  • Indawo yeMvelaphi :eTshayina
  • Ulwakhiwo lweCrystal :isigaba seFCCβ
  • Ubuninzi :3.21 g/cm
  • Ukuqina :2500 iiVickers
  • Ubungakanani benkozo :2 ~ 10μm
  • Ukucoceka kwemichiza :99.99995%
  • Umthamo wobushushu :640J·kg-1·K-1
  • Iqondo lobushushu elingaphantsi :2700℃
  • Amandla eFelexural :415 Mpa (RT 4-Point)
  • Imodyuli eNtsha:430 GPA (4pt bend, 1300℃)
  • Ukwandiswa kweThermal (CTE) :4.5 10-6K-1
  • I-Thermal conductivity :300 (W/MK)
  • Iinkcukacha zeMveliso

    Iithegi zeMveliso

    Sinokwanelisa ngokulula abathengi bethu abahlonitshwayo ngomgangatho wethu obalaseleyo, ixabiso elithengisiweyo eligqwesileyo kunye nenkonzo entle ngenxa yokuba sibe neengcaphephe ezithe chatha kwaye sisebenza nzima kwaye sikwenza ngendlela engabizi kakhulu kwi-Chinese Professional Pure Rhenium Filament- Mocvd, Siyakwamkela ukuba usibuze ngoqhagamshelwano okanye ngeposi kwaye sinethemba lokwakha ubudlelwane bothando obusebenzayo kunye nentsebenziswano.
    Sinokwanelisa ngokulula abathengi bethu abahlonitshwayo ngomgangatho wethu ophezulu obalaseleyo, ixabiso elithengisiweyo elincomekayo kunye nenkonzo entle ngenxa yokuba sibe neengcali ezithe chatha kwaye sisebenza nzima kwaye siyenza ngendlela enexabiso eliphantsi.I-China Filament kunye neRhenium, Ngenxa yosukelo lwethu olungqongqo kumgangatho, kunye nenkonzo yasemva kokuthengiswa, imveliso yethu iya ithandwa ngakumbi kwihlabathi jikelele. Uninzi lwabathengi beza kutyelela umzi-mveliso wethu kwaye bafake iiodolo. Kwaye kukho nabahlobo abaninzi basemzini abeze ukuze babonwe, okanye basiphathise ukuba sibathengele ezinye izinto. Wamkelekile kakhulu ukuba uze eTshayina, kwisixeko sethu nakwifektri yethu!


       

    SiC Coated zeGraphite Abathwali

    Ingcaciso yeMveliso

    Sigcina ukunyamezelana ngokusondeleyo xa sisebenzisa i-SiC coating, sisebenzisa i-high-precision machining ukuqinisekisa iprofayili ye-susceptor efanayo. Siphinda sivelise izixhobo ezineempawu ezifanelekileyo zokuxhathisa umbane ukuze zisetyenziswe kwiinkqubo ezitshisayo. Onke amacandelo agqityiweyo aza kunye nesatifikethi sokuthotyelwa kobunyulu kunye nobukhulu.

    Inkampani yethu ibonelela ngeenkonzo zenkqubo yokugquma kwe-SiC ngendlela ye-CVD kumphezulu wegraphite, iikeramics kunye nezinye izinto, ukwenzela ukuba iigesi ezikhethekileyo ezinekhabhoni kunye nesilicon zisabela kubushushu obuphezulu ukuze zifumane ubunyulu obuphezulu beamolekyuli zeSiC, iimolekyuli ezifakwe kumphezulu wezinto ezigqunyiweyo, ukwenza umaleko okhuselayo we-SIC. I-SIC eyenziwe idityaniswe ngokuqinileyo kwisiseko segraphite, inika isiseko segraphite iipropati ezikhethekileyo, ngaloo ndlela yenza umphezulu we-graphite compact, i-Porosity-free, ukumelana nobushushu obuphezulu, ukuxhathisa kwe-corrosion kunye nokumelana ne-oxidation.

    2

    Inkqubo ye-CVD ihambisa ubunyulu obuphezulu ngokugqithisileyo kunye noxinaniso lwethiyori ye-SiC yokwambathisa ngaphandle kobunzima. Ngaphezu koko, njengoko i-silicon carbide inzima kakhulu, inokugudiswa kwindawo efana nesipili. I-CVD silicon carbide (SiC) yokwambathisa izise iingenelo ezininzi kubandakanya umphezulu wococeko oluphezulu kunye nokuqina kokunxiba. Njengoko iimveliso ezigqunyiweyo zisebenza kakuhle kwi-vacuum ephezulu kunye neemeko zobushushu obuphezulu, zilungele usetyenziso kwishishini le-semiconductor kunye nenye indawo ecocekileyo kakhulu. Sikwabonelela ngeemveliso zepyrolytic graphite (PG).

    Iimpawu eziphambili:

    1. Ukumelana nobushushu obuphezulu be-oxidation:

    Ukumelana ne-oxidation kusekuhle kakhulu xa ubushushu buphezulu ukuya kuma-1600 C.

    2. Ukucoceka okuphezulu: okwenziwe nge-chemical vapour deposition phantsi kwemeko yokushisa kwe-chlorination ephezulu.

    3. Ukumelana nokhukuliseko: ubunzima obuphezulu, indawo edibeneyo, iincinci ezincinci.

    4. Ukumelana nokubola: i-asidi, i-alkali, ityuwa kunye ne-organic reagents.

    IiNgcaciso eziPhambili ze-CVD-SIC yoMtyaliso:

    SiC-CVD

    Ukuxinana

    (g/cc)

    3.21

    Amandla e-Flexural

    (Mpa)

    470

    Ukwandiswa kweThermal

    (10-6/K)

    4

    I-Thermal conductivity

    (W/mK)

    300

    Isicelo: I-CVD silicon carbide coating sele isetyenziswe kumashishini e-semiconductor esele, njenge-MOCVD itreyi, i-RTP kunye ne-oxide etching igumbi ekubeni i-silicon nitride inokumelana nokutshatyalaliswa okukhulu kwe-thermal kwaye inokumelana ne-plasma yamandla aphezulu.
    -I-Silicon carbide isetyenziswa ngokubanzi kwi-semiconductor kunye nokugqoka.

    Ubunakho bokubonelela:

    10000 Iqhekeza/Amaqhekeza ngenyanga
    UkuPakisha kunye nokuhanjiswa:
    Ukupakisha:Ukupakisha okuMgangatho & okuqinileyo
    Ingxowa yePoly + Ibhokisi + Ikhathoni + Iphalethi
    Izibuko:
    Ningbo/Shenzhen/Shanghai
    Ixesha lokukhokhela:

    Ubuninzi (Amaqhekeza) 1 - 1000 >1000
    Est. Ixesha(iintsuku) 15 Kuza kuthethathethwana

    Sinokwanelisa ngokulula abathengi bethu abahlonitshwayo ngomgangatho wethu obalaseleyo, ixabiso elithengisiweyo eligqwesileyo kunye nenkonzo entle ngenxa yokuba sibe neengcaphephe ezithe chatha kwaye sisebenza nzima kwaye sikwenza ngendlela engabizi kakhulu kwi-Chinese Professional Pure Rhenium Filament- Mocvd, Siyakwamkela ukuba usibuze ngoqhagamshelwano okanye ngeposi kwaye sinethemba lokwakha ubudlelwane bothando obusebenzayo kunye nentsebenziswano.
    Ubungcali baseTshayinaI-China Filament kunye neRhenium, Ngenxa yosukelo lwethu olungqongqo kumgangatho, kunye nenkonzo yasemva kokuthengiswa, imveliso yethu iya ithandwa ngakumbi kwihlabathi jikelele. Uninzi lwabathengi beza kutyelela umzi-mveliso wethu kwaye bafake iiodolo. Kwaye kukho nabahlobo abaninzi basemzini abeze ukuze babonwe, okanye basiphathise ukuba sibathengele ezinye izinto. Wamkelekile kakhulu ukuba uze eTshayina, kwisixeko sethu nakwifektri yethu!


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