SiC Coated

I-VET ENERGY, Umenzi okhokelayo we-CVD SIC yokugquma e-China

Izinto eziphathekayo zitshintsha ikamva

I-Silicon carbide (i-SiC) yinto entsha ye-semiconductor material. I-Silicon carbide ine-gap enkulu yebhendi (malunga namaxesha e-3 e-silicon), amandla aphezulu abalulekileyo entsimi (malunga namaxesha angama-10 e-silicon), i-conductivity ephezulu ye-thermal (malunga ne-3 amaxesha e-silicon). Yinto ebalulekileyo kwisizukulwana esilandelayo semiconductor imathiriyeli. Iingubo ze-SiC zisetyenziswa ngokubanzi kwishishini le-semiconductor kunye ne-photovoltaics yelanga. Ngokukodwa, i-susceptors esetyenziswe ekukhuleni kwe-epitaxial ye-LEDs kunye ne-Si single crystal epitaxy ifuna ukusetyenziswa kwe-SiC coating. Ngenxa yokuqina okunyukayo kwee-LED kumashishini okukhanyisa kunye nokubonisa, kunye nophuhliso olomeleleyo lweshishini le-semiconductor,Imveliso yokwambathisa yeSiCamathemba mahle kakhulu.

UMHLABA WESICELO

图片8Umfanekiso we7

Ukusetyenziswa kwemveliso kunye nokusebenza                                                                                               Ukusetyenziswa kwemveliso kunye nokusetyenziswa

Si single crystal industry, GaN, AlN, sapphire kunye nezinye MOCVD pedestals. -Isiseko se-graphite yokugubungela ukukhula kwe-crystal silicon epitaxial enye

Ukusebenza okuphambili: ukucoceka okuphezulu, ukumelana nokhukuliseko, ukuguquguquka okuphezulu kwe-thermal, -inkqubo ye-MOCVD, isiseko se-graphite yokugquma ukukhula kwe-GaN epitaxial

ukumelana nobushushu obuphezulu, i-coefficient yokwandisa i-thermal ephantsi.

 

Ishishini leSemiconductor
Ishishini leSemiconductor
Ishishini leSemiconductor
I-Solar photovoltaic

 

I-Thermal Conductivity 250 W/m °K Indlela yeLaser flash, RT
Ukwandiswa kweThermal (CTE) 4.5 x 10-6°K Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer
       Ipropati Ixabiso Indlela
Ukuxinana 3.21 g/cc I-Sink-float kunye ne-dimension
Ubushushu obuthile 0.66 J/g °K I-Pulsed laser flash
Amandla e-Flexural 450 MPa560 MPa I-4 point bend, i-RT4 point bend, i-1300 °
Ukuqina kokwaphuka 2.94 MPa m1/2 I-Microindentation
Ukuqina 2800 Vicker's, 500g umthwalo
Elastic ModulusOlutsha's Modulus 450 GPA430 GPA 4 pt ukugoba, RT4 pt ukugoba, 1300 °C
Ubungakanani beenkozo 2 - 10µm I-SEM

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Ubunyulu, Ubume be-SEM, uhlalutyo lokutyeba kweUkwaleka kweSiC

Ukucoceka kweengubo ze-SiC kwi-graphite ngokusebenzisa i-CVD kuphezulu njenge-99.9995%. Ubume bayo yi-fcc. Iifilimu ze-SiC ezifakwe kwi-graphite (111) zijoliswe njengoko kuboniswe kwidatha ye-XRD (Umfanekiso.1) ebonisa umgangatho wayo ophezulu we-crystalline. Ubunzima befilimu ye-SiC bufana kakhulu njengoko kuboniswe kumfanekiso we-2.

Idatha ye-SEM ye-CVD SiC ifilimu encinci, ubukhulu bekristale yi-2 ~ 1 Opm

图片2

Umzobo 2: ubukhulu beyunifomu yeefilimu zeSiC

Isakhiwo se-crystal yefilimu ye-CVD SiC yisakhiwo se-cubic esijongene nobuso, kwaye i-orientation yokukhula kwefilimu isondele kwi-100%

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I-SEM kunye ne-XRD yefilimu ye-beta-SiC kwigraphite

图片1

I-Crystal SINGLE SILICON EPITAXIAL BASE

Ukusebenza kwemveliso kunye nethemba lesicelo.

I-silicon carbide (i-SiC) ifakweIsiseko sesona siseko se-silicon eyodwa ye-crystal kunye ne-GaN epitaxy, eyona nxalenye ephambili ye-epitaxy furnace. Isiseko yinto ephambili yokuvelisa i-silicon ye-monocrystalline kwiisekethe ezinkulu ezidibeneyo. Inobunyulu obuphezulu, ukumelana nobushushu obuphezulu, ukuxhathisa ukubola, ukuxinana komoya okulungileyo kunye nezinye iimpawu ezibalaseleyo zemathiriyeli.

Ukusetyenziswa kwemveliso kunye nokusetyenziswa

Isiseko se-graphite yokwaleka kwikristale enye yesilicon epitaxial ukukhulaIfanele oomatshini be-Aixtron, njl Ubunzima bokugquma: 90~150umUbubanzi be-wafer crater yi-55mm.

I-SOLAR PHOTOVOLTAIC

GAupidpelitcubaetiaonnd

i-graphite crucible coatingyesilicon eyodwa yekristale ngendlela yokutsala ngokuthe tye

图片15

Ukuveliswa kwemveliso ye-crystal ye-silicon enye ngendlela yokutsala ngokuthe tye,icrucible enamacembe amathathunjengamaqondo obushushu aphezulu kunye neendawo ezifanayo zokuqhuba ubushushu, ityhubhu yokuqukuqela njengendawo yokukhupha irhasi yokuhambisa ubushushu, ityhubhu yokuqukumbela njengejelo lokujikeleza kwerhasi.
图片16图片17
Iimpawu zemveliso
Ukumelana nobushushu obuphezulu, ukuxhathisa ukubola, ubomi benkonzo ende, kunokuphucula umgangatho kunye nemveliso ye-wafer. Nge-coefficient ephantsi kakhulu yokwandiswa kwe-thermal, ukumelana nobushushu obuphezulu, ukuxhathisa ukugqoka okuphezulu, ukugquma okulungileyo, ukuzinza kweekhemikhali okulungileyo, kufuphi nemfusa (obomvu) ngaphandle kokungena kokukhanya okubonakalayo.
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Kutheni ukhethe thina

Izixhobo zobungcali kunye neqela

Iklasi ye-1000 iworkshop engenathuli

*ngaphezu 3000 square metres 1000 iklasi uthuli-free workshop

*Iqela le-R & D leNtsebenziswano ye-Academy yaseTshayina yeSayensi

*Imveliso ekhethekileyo kunye nezixhobo zokuvavanya ngokuchanekileyo

*Umthamo owaneleyo kunye nomgangatho ophezulu wemveliso86b0afaa78106ff600d26e97300491b

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Inkonzo eKhawulezayo

Kwitheyiji yoku-odola kwangaphambili, iqela lethu lokuthengisa elichwephesha lingaphendula umbuzo wakho ngaphakathi kwemizuzu engama-50-100 ngexesha leeyure zokusebenza kwaye kwiiyure ezili-12 ngexesha lokuvala. Impendulo ekhawulezileyo kunye neyobuchule iya kukunceda ukuba uphumelele umxhasi wakho ngokhetho olugqibeleleyo ekusebenzeni okuphezulu.

Kwinqanaba lokuqhuba i-odolo, iqela lethu lenkonzo yobuchwephesha liya kuthatha imifanekiso rhoqo ngeentsuku ezi-3 ukuya kwezi-5 kuhlaziyo lwenkcazelo yesandla sakho soku-1 kwimveliso kunye nokubonelela ngamaxwebhu kwiiyure ezingama-36 ukuhlaziya inkqubela yokuthumela. Sinikela ingqalelo ephezulu kwinkonzo yasemva kokuthengisa.

Kwinqanaba lasemva kokuthengisa, iqela lethu lenkonzo lihlala linxibelelana nawe kwaye lihlala lisecaleni kwakho kwinkonzo yakho. Inkonzo yethu yobuchwephesha emva kokuthengisa iquka ukubhabha iinjineli zethu ukukunceda ukusombulula iingxaki kwisiza. Iwaranti yethu ziinyanga ezili-12 emva kokunikezelwa.

Iinkcukacha zokupakisha

ae1aab73834b4523bdce18357735486

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I-Ningbo VET Energy Technology Co., Ltd ngumvelisi oqeqeshiweyo wamacandelo egraphite, ngakumbi kuphuhliso lwemathiriyeli emitsha ye-semiconductor kwaye igxile kuphando kunye nophuhliso lwe-SiC coating. Iimveliso eziphambili zenkampani zi-SiC-coated susceptors kwishishini le-LED kunye ne-monocrystalline silicon ishishini. Ifilimu ye-SiC esetyenziselwa imboni ye-LED kunye ne-monocrystalline silicon ishishini yi-cubic phase, enesakhiwo esifanayo se-lattice njengedayimane, kwaye ukuqina kwayo kulungile njengedayimane. I-Silicon carbide yeyona nto ivuthiweyo ye-gap semiconductor imathiriyeli, kwaye inamathuba osetyenziso olubanzi kushishino lwe-semiconductor. Ukongeza, i-silicon carbide ine-conductivity ephezulu ye-thermal, i-coefficient encinci yokwandisa i-thermal, ukumelana nobushushu obuphezulu (malunga ne-2700 degrees Celsius), kunye nokumelana nokugqwesa kwe-corrosion. Iimveliso ze-silicon carbide zokugquma zenkampani zikwasetyenziswa ngokubanzi kwi-aerospace, imboni ye-photovoltaic, amandla enyukliya, i-high-speed rail, izithuthi kunye namanye amashishini.

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