UMHLABA WESICELO
Ukusetyenziswa kwemveliso kunye nokusebenza Ukusetyenziswa kwemveliso kunye nokusetyenziswa
Si single crystal industry, GaN, AlN, sapphire kunye nezinye MOCVD pedestals. -Isiseko se-graphite yokugubungela ukukhula kwe-crystal silicon epitaxial enye
Ukusebenza okuphambili: ukucoceka okuphezulu, ukumelana nokhukuliseko, ukuguquguquka okuphezulu kwe-thermal, -inkqubo ye-MOCVD, isiseko se-graphite yokugquma ukukhula kwe-GaN epitaxial
ukumelana nobushushu obuphezulu, i-coefficient yokwandisa i-thermal ephantsi.
I-Thermal Conductivity | 250 W/m °K | Indlela yeLaser flash, RT |
Ukwandiswa kweThermal (CTE) | 4.5 x 10-6°K | Ubushushu begumbi ukuya kuma-950 °C, i-silica dilatometer |
Ipropati | Ixabiso | Indlela |
Ukuxinana | 3.21 g/cc | I-Sink-float kunye ne-dimension |
Ubushushu obuthile | 0.66 J/g °K | I-Pulsed laser flash |
Amandla e-Flexural | 450 MPa560 MPa | I-4 point bend, i-RT4 point bend, i-1300 ° |
Ukuqina kokwaphuka | 2.94 MPa m1/2 | I-Microindentation |
Ukuqina | 2800 | Vicker's, 500g umthwalo |
Elastic ModulusOlutsha's Modulus | 450 GPA430 GPA | 4 pt ukugoba, RT4 pt ukugoba, 1300 °C |
Ubungakanani beenkozo | 2 - 10µm | I-SEM |
Ubunyulu, Ubume be-SEM, uhlalutyo lokutyeba kweUkwaleka kweSiC
Ukucoceka kweengubo ze-SiC kwi-graphite ngokusebenzisa i-CVD kuphezulu njenge-99.9995%. Ubume bayo yi-fcc. Iifilimu ze-SiC ezifakwe kwi-graphite (111) zijoliswe njengoko kuboniswe kwidatha ye-XRD (Umfanekiso.1) ebonisa umgangatho wayo ophezulu we-crystalline. Ubunzima befilimu ye-SiC bufana kakhulu njengoko kuboniswe kumfanekiso we-2.
Umzobo 2: ubukhulu beyunifomu yeefilimu zeSiC
Isakhiwo se-crystal yefilimu ye-CVD SiC yisakhiwo se-cubic esijongene nobuso, kwaye i-orientation yokukhula kwefilimu isondele kwi-100%
I-SEM kunye ne-XRD yefilimu ye-beta-SiC kwigraphite
I-Crystal SINGLE SILICON EPITAXIAL BASE
Ukusebenza kwemveliso kunye nethemba lesicelo.
I-silicon carbide (i-SiC) ifakweIsiseko sesona siseko se-silicon eyodwa ye-crystal kunye ne-GaN epitaxy, eyona nxalenye ephambili ye-epitaxy furnace. Isiseko yinto ephambili yokuvelisa i-silicon ye-monocrystalline kwiisekethe ezinkulu ezidibeneyo. Inobunyulu obuphezulu, ukumelana nobushushu obuphezulu, ukuxhathisa ukubola, ukuxinana komoya okulungileyo kunye nezinye iimpawu ezibalaseleyo zemathiriyeli.
Ukusetyenziswa kwemveliso kunye nokusetyenziswa
Isiseko se-graphite yokwaleka kwikristale enye yesilicon epitaxial ukukhulaIfanele oomatshini be-Aixtron, njl Ubunzima bokugquma: 90~150umUbubanzi be-wafer crater yi-55mm.
I-SOLAR PHOTOVOLTAIC
GAupidpelitcubaetiaonnd
i-graphite crucible coatingyesilicon eyodwa yekristale ngendlela yokutsala ngokuthe tye
Kutheni ukhethe thina
Izixhobo zobungcali kunye neqela
Iklasi ye-1000 iworkshop engenathuli
Inkonzo eKhawulezayo
Kwitheyiji yoku-odola kwangaphambili, iqela lethu lokuthengisa elichwephesha lingaphendula umbuzo wakho ngaphakathi kwemizuzu engama-50-100 ngexesha leeyure zokusebenza kwaye kwiiyure ezili-12 ngexesha lokuvala. Impendulo ekhawulezileyo kunye neyobuchule iya kukunceda ukuba uphumelele umxhasi wakho ngokhetho olugqibeleleyo ekusebenzeni okuphezulu.
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Ii-FAQs
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