6 Intshi N Uhlobo SiC Wafer

6 Intshi N Uhlobo lweSiC Wafer Featured Image

Inkcazelo emfutshane:

I-6 Intshi ye-N Uhlobo lwe-SiC Wafer evela kwi-VET Energy yi-substrate ephezulu yokusebenza eyenzelwe izicelo ze-semiconductor eziphambili, ezinikezela nge-conductivity ephezulu ye-thermal kunye nokusebenza kakuhle kwamandla. I-VET Amandla isebenzisa itekhnoloji ye-cutting-edge ukuvelisa ii-wafers ezikumgangatho ophezulu ezihlangabezana neemfuno ezingqongqo ze-elektroniki yale mihla, iqinisekisa ukuthembeka kunye nokuqina kwizixhobo zombane.

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Iinkcukacha zeMveliso

Iithegi zeMveliso

Olu hlobo lwe-SiC Wafer ye-intshi ye-6 ye-intshi yenzelwe ukusebenza okuphuculweyo kwiimeko ezinzima, iyenza ibe lolona khetho lufanelekileyo kwizicelo ezifuna amandla aphezulu kunye nokumelana nobushushu. Iimveliso eziphambili ezinxulunyaniswa nesi siqwengana sibandakanya iSi Wafer, iSiC Substrate, iSOI Wafer, kunye neSiN Substrate. Ezi zixhobo ziqinisekisa ukusebenza kakuhle kwiinkqubo ezahlukeneyo zokuvelisa i-semiconductor, okwenza izixhobo ezisebenza ngamandla kwaye zihlala zihlala zihlala zihlala zihlala zikhona.

Kwiinkampani ezisebenza nge-Epi Wafer, i-Gallium Oxide Ga2O3, i-Cassette, okanye i-AlN Wafer, i-VET Energy's 6 Intshi ye-N Uhlobo lwe-SiC Wafer ibonelela ngesiseko esiyimfuneko kuphuhliso lwemveliso entsha. Nokuba ikwi-electronics enamandla amakhulu okanye iteknoloji yeRF yamva nje, ezi wafers ziqinisekisa ukuqhuba okugqwesileyo kunye nokumelana nobushushu obuncinci, ukutyhala imida yokusebenza kakuhle kunye nokusebenza.

IINGCACISO ZOKUXHAPHAZA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
Into	nP	n-Pm	n-Nd	SI	SI
TTV(GBIR)	≤6um	≤6um
I-Bow(GF3YFCD)-Ixabiso elipheleleyo	≤15μm	≤15μm	≤25μm		≤15μm
Warp(GF3YFER)	≤25μm	≤25μm	≤40μm		≤25μm
I-LTV(SBIR)-10mmx10mm	<2μm
Wafer Edge	Beveling

UBUPHAKAMBE GQIBELA

*n-Pm=n-type Pm-Grade,n-Ps=n-type Ps-Grade,Sl=Semi-lnsulation

Into	8-intshi	6-Intshi			4-intshi
	nP	n-Pm	n-Nd	SI	SI
Umphezulu Gqiba	Icala eliphindwe kabini le-Optical Polish, iSi- Face CMP
Ubunzima boMphezulu	(10um x 10um) Si-FaceRa≤0.2nm I-C-Face Ra≤ 0.5nm			(5umx5um) Si-Face Ra≤0.2nm I-C-Face Ra≤0.5nm
IiChips zoMda	Akukho okuvunyelweyo (ubude nobubanzi≥0.5mm)
Iindenti	Akukho Ivumelekileyo
Imikrwelo(Si-Face)	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter	Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter			Ubuninzi.≤5,Yongezeleka Ubude≤0.5×i-wafer diameter
Iintanda	Akukho Ivumelekileyo
Ukungabandakanywa kuMda	3mm